ptma210404fl Infineon Technologies Corporation, ptma210404fl Datasheet - Page 2

• Manufacturer Part Number: ptma210404fl
• Description: Dual Wideband Rf Ldmos Power Amplifier
• Manufacturer: Infineon Technologies Corporation

Confidential, Limited Internal Distribution
RF Characteristics
CW Measurements
V
Characteristic
Gain Flatness
Gain Compression
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Final Stage On-state Resistance
Operating Gate Voltage
Gate Leakage Current
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Input Power for CW - each side
Total Device Dissipation
Total Device Dissipation
Storage Temperature Range
Thermal Resistance (T
Preliminary Data Sheet
DD
Above 25°C derate by
Above 25°C derate by
= 28 V, I
DQ1A
= I
DQ1B
(tested in Infineon test fixture)
CASE
= 55 mA, I
(cont.)
= 70°C)
DQ2B
Conditions
1 W / 15 MHz
40 W
Conditions
V
V
V
V
V
I
V
DQ2
GS
DS
DS
GS
DS
GS
= 110 mA, V
= 0 V, I
= 28 V, V
= 63 V, V
= 28 V, I
= 10 V, V
= 10 V, V
Stage 1
Stage 2
Stage 1
Stage 2
= 110 mA
DS
DQ1
GS
GS
DS
DS
= 10 mA
= 0.1 V
GS2A
= 0 V
= 0 V
= 0 V
= 120 mA,
2 of 11
= 1.05 V, ƒ = 2018 MHz
V
Symbol
Symbol
R
R
Symbol
(BR)DSS
DS(on)1
DS(on)2
V
T
R
R
I
I
I
V
V
GSS
DSS
DSS
P
P
P
DSS
STG
—
T
GS
GS
G
IN
D
D
J
JC
JC
Preliminary PTMA210404FL
Min
Min
2.0
65
—
—
—
—
—
—
—
–40 to +150
–0.5 to +12
Value
0.167
0.625
0.30
–0.4
< 20
Typ
Typ
200
110
3.6
0.6
2.5
6.0
1.6
65
29
—
—
—
—
Rev. 03, 2009-06-05
Max
Max
–1.0
10.0
1.0
3.0
1.0
—
—
—
—
W/°C
W/°C
°C/W
°C/W
Unit
Unit
Unit
dBm
dB
dB
µA
µA
µA
°C
°C
W
W
V
V
V
V