ptma180152m Infineon Technologies Corporation, ptma180152m Datasheet

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ptma180152m

Manufacturer Part Number
ptma180152m
Description
Wideband Rf Ldmos Integrated Power Amplifier 15 W, 1800 ? 2000 Mhz
Manufacturer
Infineon Technologies Corporation
Datasheet
Wideband RF LDMOS Integrated Power Amplifier
15 W, 1800 – 2000 MHz
Description
The PTMA180152M is a wideband, matched, 15-watt, 2-stage
LDMOS integrated amplifier intended for wideband driver
applications in the 1800 to 2000 MHz band. This device is offered in
a 20-lead thermally-enhanced overmolded package for cool and
reliable operation.
RF Characteristics
GSM/EDGE Measurements
V
Characteristic
Gain
Power Added Efficiency
Input Return Loss
Error Vector Magnitude
Adjacent Channel Power Ratio
All published data at T
Preliminary Data Sheet
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DS
= 28 V, I
32
30
28
26
24
22
20
18
16
14
12
10
1700
V
DQ1
DD
Return Loss
1750
= 28 V, I
Gain
Broadband Performance
= 70 mA, I
ƒ = 1805 - 1880 MHz
1800
CASE
DQ1
Frequency (MHz)
= 70 mA, I
DQ2
1850
= 25°C unless otherwise indicated
= 150 mA, ƒ = 1805 – 1880 MHz, P
(not subject to production test—verified by design/characterization in Infineon test fixture)
1900
DQ2
P
= 120 mA
OUT
1950
Conditions
2000
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
1 of 5
OUT
EVM (RMS)
Symbol
PTMA180152M*
Package DSO-20-63
Features
ACPR1
ACPR2
= 7 W average
G
IRL
Designed for wide RF bandwidth and low memory
effects
Broadband on-chip matching, 50-ohm input and
>10-ohm output
Typical GSM/EDGE performance at 1805 – 1880
MHz, 28 V, 7 W
- Gain = 30 dB
- Efficiency = 30 %
- EVM @ 2 W = 1.5%
- ACPR at 400 KHz = –63 dBc
- ACPR at 600 KHz = –70 dBc
Typical CW performance, 1800 MHz, 28 V
- Output power at P–1dB > 20 W
- Efficiency > 49%
Integrated ESD protection: Meets HBM Class 1B
(minimum), per JESD22-A114F
Capable of handling 3:1 VSWR @ 28 V,
15 W (CW) output power
Thermally-enhanced RoHS-compliant package
ps
*See Infineon distributor for future availability.
Preliminary PTMA180152M
Min
Typ
–63
–70
1.5
30
30
table continued next page
Rev. 01, 2009-03-03
Max
–10
Unit
dBc
dBc
dB
dB
%
%

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ptma180152m Summary of contents

Page 1

... Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2000 MHz Description The PTMA180152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2000 MHz band. This device is offered in a 20-lead thermally-enhanced overmolded package for cool and reliable operation ...

Page 2

... Junction Temperature Input Power Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (T = 70° CW) CASE Ordering Information Type and Version Package Outline PTMA180152M V1 PG-DSO-20-63 Preliminary Data Sheet = 7 W average OUT Symbol IMD3 Conditions Symbol ...

Page 3

... DQ2 -35 -40 Efficiency -45 -50 -55 -60 -65 -70 -75 -80 - Preliminary PTMA180152M Two-tone Drive- mA 120 mA DD DQ1 DQ2 ƒ = 1805, 1830, 1880 MHz 50 Efficiency 45 1805 MHz 40 1830 MHz 35 1880 MHz IMD3 ...

Page 4

... TOP/BOTTOM ALL SIDES 3.50 [0.137] MAX 0.40+0.13 [0.015+0.005] 5. 0.25mm 0.15 [0.006] REF 0+0.1 0.95±0.15 [0.004] [0.037±0.006] STANDOFF [0.063] REF DETAIL Preliminary PTMA180152M 6. 13.00 [0.512] MAX 2.95 6.00 [0.116] [0.236] BOTTOM VIEW 4. SEE DETAIL A 11.00±0.10 [0.433±0.004] END VIEW GAUGE PLANE 0.25 +0.07 -0. +0.003 ...

Page 5

... PTMA180152M Confidential, Limited Internal Distribution Revision History: 2009-03-03 Previous Version: None Page Subjects (major changes since last revision) We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. ...

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