huf75307p3 Fairchild Semiconductor, huf75307p3 Datasheet - Page 4

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huf75307p3

Manufacturer Part Number
huf75307p3
Description
15a, 55v, 0.090 Ohm, N-channel Ultrafet Power Mosfets
Manufacturer
Fairchild Semiconductor
Datasheet
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
100
25
20
15
10
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
0.1
200
100
10
5
0
10
1
0
10
1
FIGURE 7. SATURATION CHARACTERISTICS
-5
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
DSS(MAX)
V
V
1
DS
DS
V
= 55V
GS
, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
= 10V
10
2
10
-4
V
GS
= 7V
V
V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
GS
GS
C
3
= 25
= 20V
= 10V
(Continued)
T
T
o
C
J
C
= MAX RATED
= 25
FIGURE 4. PEAK CURRENT CAPABILITY
10
100 s
1ms
10ms
4
o
-3
C
V
V
100
GS
GS
= 6V
= 5V
200
5
t, PULSE WIDTH (s)
10
-2
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
25
20
15
10
200
100
5
0
10
1
0.001
0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
FIGURE 8. TRANSFER CHARACTERISTICS
T
DD
C
If R = 0
t
If R
t
AV
AV
= 25
= 15V
= (L)(I
= (L/R)ln[(I
o
0
1.5
C
10
V
STARTING T
GS
-1
AS
0.01
, GATE TO SOURCE VOLTAGE (V)
t
)/(1.3*RATED BV
AV
AS
, TIME IN AVALANCHE (ms)
HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
*R)/(1.3*RATED BV
3.0
I = I
J
= 150
25
0.1
o
o
STARTING T
C DERATE PEAK
DSS
C
4.5
10
- V
0
175 - T
DD
DSS
150
)
- V
-55
J
C
1
= 25
DD
6.0
o
C
) +1]
175
o
C
o
C
25
o
C
10
7.5
10
1

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