huf75939s3st Fairchild Semiconductor, huf75939s3st Datasheet - Page 7

• Manufacturer Part Number: huf75939s3st
• Description: 22a, 200v, 0.125 Ohm, N-channel, Ultrafet Power Mosfet
• Manufacturer: Fairchild Semiconductor

PSPICE Electrical Model
.SUBCKT HUF75939 2 1 3 ;
CA 12 8 3.6e-9
CB 15 14 3.5e-9
CIN 6 8 2e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 225
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.78e-9
LSOURCE 3 7 3.92e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 83.5e-3
RGATE 9 20 7.6e-1
RLDRAIN 2 5 10
RLGATE 1 9 57.8
RLSOURCE 3 7 39.2
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 10e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*38),2.5))}
.MODEL DBODYMOD D (IS = 1.2e-12 RS = 5.5e-3 XTI = 5.5 TRS1 = 1e-5 TRS2 = 8e-6 + CJO = 12.5e-10 TT = 1e-7 M = 0.42)
.MODEL DBREAKMOD D (RS = 2. 5TRS1 = 1e- 3TRS2 = -8.9e-6)
.MODEL DPLCAPMOD D (CJO = 2.5e- 9IS = 1e-3 0N = 10 M = 0.9)
.MODEL MMEDMOD NMOS (VTO = 3.14 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.6e-1)
.MODEL MSTROMOD NMOS (VTO = 3.68 KP = 100 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.76 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.6 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 =1.52e- 3TC2 = -2e-7)
.MODEL RDRAINMOD RES (TC1 = 9.8e-3 TC2 = 2.6e-5)
.MODEL RSLCMOD RES (TC1 = 3e-3 TC2 = 1e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.3e-3 TC2 = -1.3e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.8e- 3TC2 = 1.7e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.5 VOFF= -1)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1 VOFF= -8.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.1 VOFF= 0.2)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.1)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
GATE
1
rev 10 October 2000
RLGATE
LGATE
9
RGATE
CA
12
20
+
EVTEMP
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
MSTRO
+
-
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
17
MWEAK
RVTHRES
RBREAK
11
+
-
17
18
7
HUF75939P3, HUF75939S3ST Rev. B
+
-
18
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
SOURCE
DRAIN
2
3