huf76409d3s Fairchild Semiconductor, huf76409d3s Datasheet - Page 4

• Manufacturer Part Number: huf76409d3s
• Description: 17a, 60v, 0.071 Ohm, N-channel, Logic Level Ultrafet Power Mosfet
• Manufacturer: Fairchild Semiconductor

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
20
15
10
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
100
5
0
0.1
10
1.0
1
80
70
60
50
40
1
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
FIGURE 7. TRANSFER CHARACTERISTICS
2
DD
SINGLE PULSE
T
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
J
= 15V
VOLTAGE AND DRAIN CURRENT
= MAX RATED T
I
T
D
T
J
V
V
= 7A
J
= 175
GS
DS
V
2.0
= 25
GS
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
4
, GATE TO SOURCE VOLTAGE (V)
o
o
DS(ON)
C
C
I
D
= 17A
I
D
C
= 12A
= 25
3.0
10
o
6
C
T
T
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
J
C
= -55
= 25
o
o
(Continued)
C
C
4.0
8
100 s
10ms
1ms
100
5.0
10
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
60
10
20
15
10
1
0.01
5
0
0
2.5
2.0
1.5
1.0
0.5
0
-80
V
V
FIGURE 8. SATURATION CHARACTERISTICS
GS
GS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= 5V
= 10V
STARTING T
CAPABILITY
RESISTANCE vs JUNCTION TEMPERATURE
-40
T
If R = 0
t
If R
t
V
AV
AV
C
0.1
DS
T
= 25
1
= (L)(I
= (L/R)ln[(I
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
t
0
AV
J
0
o
, TIME IN AVALANCHE (ms)
C
= 150
AS
)/(1.3*RATED BV
o
AS
V
C
40
GS
*R)/(1.3*RATED BV
1
2
= 4V
HUF76409D3, HUF76409D3S Rev. B
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
80
STARTING T
DSS
V
GS
120
- V
10
= 10V, I
o
3
C)
DSS
DD
J
V
)
= 25
V
GS
160
GS
- V
D
o
= 3.5V
DD
= 18A
= 3V
C
) +1]
200
100
4