se2520l SiGe Semiconductor, se2520l Datasheet - Page 3

• Manufacturer Part Number: se2520l
• Description: 2.4ghz Power Amplifier Ic
• Manufacturer: SiGe Semiconductor

Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below. This device is ESD sensitive with an ESD rating of < 600V. Handling and assembly of this device
should be at ESD protected workstations.
Recommended Operating Conditions
DC Electrical Characteristics
Conditions: V
15-DST-01 Rev 4.9 Apr-24-2006
ΔIcc
Symbol
Symbol
Symbol
I
V
T
CC(sat)
I
V
V
V
V
V
I
STBY
I
T
IN
CTL
T
STG
CC
CTL
CTL
CC
EN
CC
EN
TEMP
A
j
SE2520L-EV1 Evaluation Board.
Supply Voltage (V
Control Voltage
Power Amplifier Enable
RF Input Power
Storage Temperature Range
Maximum Junction Temperature
Operating Temperature
Supply Voltage
Supply Current, V
Supply Current (sat) @ P
Supply Current variation over temperature from
T
(-40°C < T
PA Output Power Control Voltage Range
Current Sunk by V
Logic High Voltage
Logic Low Voltage
Leakage Current when V
CC0
A
= 25°C
= V
CC1
A
< +85°C)
= V
CC2
CTL
CC0
CTL
Parameter
Parameter
Parameter
, V
= V
= 1.6V, P
Pin
CC1
EN
EN
IN
= 0V, V
, V
= 2dBm
= 3.3V, V
CC2
IN
)
= -8dBm
CTL
= 0V
CTL
= 1.6V, P
IN
= -8dBm, T
Min.
Min.
-40
2.7
0.1
2.0
Min.
-0.3
-0.3
-0.3
-40
A
= 25°C, f = 2.45GHz, using SiGe
Typ.
Typ.
2.4GHz Power Amplifier IC
110
140
3.3
0.1
25
60
+150
+150
Max.
+3.6
V
V
+8
CC
CC
Max.
Max.
+85
130
100
200
175
3.6
1.6
0.8
SE2520L
Unit
dBm
Unit
Unit
mA
mA
μA
μA
°C
°C
°C
%
V
V
V
V
V
V
V
Final
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