se2545a30 SiGe Semiconductor, se2545a30 Datasheet - Page 7
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se2545a30
Manufacturer Part Number
se2545a30
Description
Dual Band 802.11n Wireless Lan Front End
Manufacturer
SiGe Semiconductor
Datasheet
1.SE2545A30.pdf
(18 pages)
2.4 GHz AC Electrical Characteristics
2.4 GHz Transmit Characteristics (Channel 0, Channel 1)
Conditions: V
211-DST-01 Rev 1.0 Apr-26-2006
Symbol
Tgcoup
P
P
BEVM
S
STAB
t
ΔS
2f,3f
P
802.11g
802.11b
dr
IM3
IM5
21
S
S
F
1dB
, t
t
IN
21
11
3.2
r
21
df
T
to device), all unused ports terminated with 50 ohms, unless otherwise noted.
Frequency Range
Output power
Output power
Backed Off EVM
P1dB
Small Signal Gain
Small Signal Gain
Variation Over Band
Gain @ 3.2 to 3.3 GHz
Harmonics
3
modulation
5
modulation
Rise Time
Delay and rise/fall
Time
Input Return Loss
Coupling between T0g
and T1g
Stability
A
CC
rd
th
= 25 °C, as measured on SiGe Semiconductor’s SE2545A30-EV1 evaluation board (de-embedded
Order Inter-
Order Inter-
= 3.3 V, “PU0g and TX0ag” or “PU1g and TX1ag” = 3.3 V, PU0a = PU1a = RX0ag = RX1ag = 0 V,
Parameter
54 Mbps OFDM signal,
64QAM, EVM = 3.0 %
11 Mbps CCK signal,
BT = 0.45
ACPR(Adj) < -32
ACPR(Alt) < -52
54 Mbps, OFDM signal,
64 QAM, P = 8 dBm
Pout = 18 dBm, 1 Mbps,
802.11b CCK
f1 and f2 at Fc +/- 156.25
kHz, P = 18 dBm
f1 and f2 at Fc +/- 156.25
kHz, P = 18 dBm
10 % to 90% of final
output power level
50 % of V
90/10 % of final output
power level
P
Load VSWR = 3:1
Test Signal applied at T0g
or T1g and measured at
OUT
≤ 18 dBm
Condition
A0 or A1
EN
edge and
-
-
-
-
-
-
Dual Band 802.11n Wireless LAN Front End
All non-harmonically related outputs less than
-50 dBc/1MHz
2400
Min.
22.5
25
20
6
-
-
-
-
-
-
-
-
-
-
Typ.
1.5
1.0
-35
-45
18
18
25
0
9
-
-
-
-
-
-
Preliminary Information
2500
2.5
-42
0.5
0.5
Max.
33
4
-
-
-
-
-
-
-
-
SE2545A30
dBm/MHz
MHz
dBm
dBm
dBm
Unit
dBc
dBc
dBc
dB
dB
dB
dB
μs
μs
%
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