maam71200-h1 Tyco Electronics, maam71200-h1 Datasheet

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maam71200-h1

Manufacturer Part Number
maam71200-h1
Description
Low Noise Gaas Mmic Amplifier 7.5 - 12 Ghz
Manufacturer
Tyco Electronics
Datasheet

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Part Number:
MAAM71200-H1
Manufacturer:
RALINK
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Part Number:
MAAM71200-H1
Manufacturer:
MA/COM
Quantity:
20 000
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Low Noise GaAs MMIC Amplifier
7.5 - 12.0 GHz
Features
• Noise Figure: 2.7 dB Typical
• Gain: 15.5 dB Typical
• Single Bias Supply
• Low Current Consumption
• DC Decoupled RF Input and Output
• Ceramic Package
Description
M/A-COM’s MAAM71200-H1 is a wide band, low
noise GaAs MMIC amplifier enclosed in a leadless
ceramic package.
packaged version of M/A-COM’s MAAM71200 low
noise MMIC amplifier chip.
design operates in 50 ohms without the need for
external components.
The MAAM71200-H1 is ideally suited for microstrip
assemblies where wire or ribbon bonds are used for
interconnects.
EW and communication systems.
The MAAM71200-H1 is fabricated using a mature
0.5-micron gate length GaAs process for increased
reliability and performance repeatability.
Ordering Information
MAAM71200-H1
Part Number
Typical applications include radar,
The MAAM71200-H1 is a
Bulk Packaging
The fully monolithic
Package
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Absolute Maximum Ratings
Functional Diagram
5. Exceeding any one or combination of these limits may cause
6. M/A-COM does not recommend sustained operation near
1. Case must be electrically connected to RF and DC ground.
2. The RF bond inductance from the transmission line to the
3. Nominal bias is obtained by setting V
4. Increasing V
RF IN
permanent damage to this device.
these survivability limits.
package is assumed to be 0.25 nH. Variations in bond
inductance will result in variations in VSWR and gain slope.
A small capacitive stub may be needed depending on the
inductance realized in the final assembly.
and high frequency bandwidth.
Junction Temperature
Storage Temperature
1
Thermal Resistance
Parameter
Input Power
V
DD
DD
from 4 volts to 6 volts increases output power
6
V
DD
2
Absolute Maximum
-65°C to +150°C
DD
MAAM71200-H1
5
+175°C/W
= 4 V.
+20 dBm
+150°C
5,6
+7 V
3
RF OUT
4
V5

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maam71200-h1 Summary of contents

Page 1

... The MAAM71200-H1 is ideally suited for microstrip assemblies where wire or ribbon bonds are used for interconnects. Typical applications include radar, EW and communication systems. The MAAM71200-H1 is fabricated using a mature 0.5-micron gate length GaAs process for increased reliability and performance repeatability. Ordering Information Part Number ...

Page 2

... CR-16 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAM71200-H1 Units Min. Typ. Max. dB 14.5 15.5 — dB — ...

Page 3

... North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAM71200-H1 V5 +25 C -50 C +100 Frequency (GHz) ...

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