njg1139ua2 New Japan Radio Co.,Ltd, njg1139ua2 Datasheet
njg1139ua2
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njg1139ua2 Summary of contents
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... UHF BAND LOW NOISE AMPLIFIER GaAs MMIC ! GENERAL DESCRIPTION The NJG1139UA2 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA pass-through function to select high gain mode or low gain mode by single bit control. Also, the ESD protection circuit is integrated into the IC to achieve high ESD tolerance ...
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... NJG1139UA2 ! ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain voltage Control voltage Input power Power dissipation Operating temperature Storage temperature ! ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: V PARAMETERS SYMBOL Operating voltage Control voltage (High) Control voltage (Low) Operating current1 Operating current2 Control current - 2 - CONDITIONS V DD ...
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... RF RF IIP3_1 P =-25dBm IN =1.8V, V =0V, T =+25° CTL a CONDITIONS f RF Exclude PCB & connector Gain2 losses -1dB(IN) f1=f , f2=f +100kHz IIP3_2 P =-8dBm IN NJG1139UA2 =Z =50 ohm, with application circuit s l MIN TYP MAX 470 620 770 11.0 14.0 17.0 - 1.2 1.7 -18.0 -12.0 - -8.0 -4 1.5 4.9 - 1.5 3.0 =Z =50 ohm, with application circuit ...
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... NJG1139UA2 ! TERMINAL INFORMATION No. SYMBOL Ground terminal. These terminals should be connected to the ground 1 GND plane as close as possible for excellent RF performance. This terminal is a power supply terminal of LNA and the logic circuit. 2 VDD Inductor L2 as shown in the application circuit is a part of an external matching circuit, and also provide DC power to LNA ...
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... V =1.8V =50 ohm, with application circuit CTL s l -15 - 800 900 NJG1139UA2 Gain, I vs. Pin DD (f=620MHz) 20 Gain P-1dB(IN)=-12.0dBm 0 -40 -35 -30 -25 -20 -15 -10 Pin (dBm) Gain,NF vs.frequency (f=400~900MHz) ...
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... NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: T =+25° CTL Gain, NF vs. V (f=620MHz Gain 1.5 2 2.5 V (V) DD OIP3, IIP3 vs. V (f=620MHz OIP3 IIP3 -5 -10 1 1.5 2 2 (RF off ...
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... Temperature ( =1.8V =50 ohm, with application circuit 3.5 3 2 100 100 100 o C) NJG1139UA2 P-1dB(IN) vs. Temperature (f=620MHz P-1dB(IN) -10 -15 -20 -40 - Temperature ( C) VSWR vs. Temperature (f=620MHz) 3 VSWRo 2.5 2 VSWRi 1.5 1 -40 - Temperature ( C) K factor vs ...
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... NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: T =+25° S11, S22 VSWRi, VSWRo S11, S22 (50MHz~20GHz . =1.8V =50 ohm, with application circuit CTL s l S21, S12 Zin, Zout S21, S12 (50MHz~20GHz) ...
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... V =0V =50 ohm, with application circuit CTL IIP3=+30.4dBm 800 900 NJG1139UA2 Gain, I vs. Pin DD (f=620MHz) 0 Gain - P-1dB(IN)=+15.0dBm -5 -20 -15 - Pin (dBm) Gain vs. frequency ...
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... NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: T =+25° CTL Gain vs. V (f=620MHz 1.5 2 2.5 V (V) DD OIP3, IIP3 vs. V (f=620MHz) 34 IIP3 32 30 OIP3 1.5 2 2 (RF off 1.5 2 2 =0V ...
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... Pin=-8dBm IIP3 30 OIP3 -40 - Temperature ( =0V =50 ohm, with application circuit 100 100 o C) NJG1139UA2 P-1dB(IN) vs. Temperature (f=620MHz P-1dB(IN -40 - Temperature ( C) VSWR vs. Temperature (f=620MHz) 1.5 1.4 VSWRin 1.3 1.2 1.1 VSWRout 1 -40 -20 ...
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... NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions . CTL I vs. Temperature DD (RF off -40 - Temperature ( I vs (RF off 0 (V) CTL - 12 - =0V =50 ohm, with application circuit 100 o C) CTL o -40 ( ...
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... ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: T =+25° S11, S22 VSWRi, VSWRo S11, S22 (50MHz~20GHz =0V =50 ohm, with application circuit CTL s l NJG1139UA2 S21, S12 Zin, Zout S21, S12 (50MHz~20GHz ...
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... NJG1139UA2 ! APPLICATION CIRCUIT 18nH 1PIN INDEX ! TEST PCB LAYOUT (Top View 1PIN INDEX * Please place all external parts around the IC as close as possible (Top View) 5 VCTL RFIN 6 GND VDD GND RFOUT 27nH CTL CTL 4 Logic ...
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... Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. NJG1139UA2 Unit : mm Substrate ...