np34n055hhe Renesas Electronics Corporation., np34n055hhe Datasheet - Page 6

• Manufacturer Part Number: np34n055hhe
• Description: Switching N-channel Power Mos Fet Industrial Use
• Manufacturer: Renesas Electronics Corporation.

PACKAGE DRAWINGS (Unit : mm)
1)TO-251 (MP-3)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
6
1.1 0.2
2.3 TYP.
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Gate
Gate
Protection
Diode
EQUIVALENT CIRCUIT
6.5 0.2
5.0 0.2
2.3 TYP.
Source
0.5
Drain
0.2
0.1
Body
Diode
2.3 0.2
0.5
0.5 0.1
Data Sheet D14153EJ3V0DS
0.2
0.1
2)TO-252 (MP-3Z)
2.3 TYP.
1.1 0.2
NP34N055HHE, NP34N055IHE
6.5 0.2
5.0 0.2
2.3 TYP.
0.9 MAX.
0.8 MAX.
2.3 0.2
0.8 TYP.
0.5 0.1