sp000096439 Infineon Technologies Corporation, sp000096439 Datasheet - Page 6

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sp000096439

Manufacturer Part Number
sp000096439
Description
N-channel Mosfets >500v?900v Power Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
Rev. 2.0
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
600
400
200
10
8
6
4
2
0
0
20
j
0
); I
gate
D
); I
=7.9 A; V
DD
D
=12 A pulsed
10
60
DD
=50 V
Q
T
gate
100
j
20
[°C]
[nC]
120 V
140
30
400 V
180
page 6
40
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
10
700
660
620
580
540
10
10
10
SD
-1
2
1
0
-60
=f(T
)
0
j
); I
j
-20
D
=0.25 mA
0.5
150 °C
20
V
T
SD
j
60
25 °C
[°C]
1
[V]
100
IPB60R165CP
1.5
25 °C, 98%
150 °C, 98%
140
2008-02-18
180
2

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