maq591 Hope Microelectronics co., Ltd, maq591 Datasheet - Page 4

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maq591

Manufacturer Part Number
maq591
Description
Npn 7.0ghz Wideband Transistor
Manufacturer
Hope Microelectronics co., Ltd
Datasheet
CHARACTERISTICS
T
Notes
1. G
2. d
Tel:+86-755-82973806 Fax:+86-755-82973550 E-mail: sales@hoperf.com http://www.hoperf.com
V
V
V
I
h
C
f
G
V
j
s
CBO
T
SYMBOL
FE
(BR)CBO
(BR)CES
(BR)EBO
o
= 25 C; unless otherwise specified
re
21
MAQ591
UM
measured at f
2
im
UM
= 60 dB (DIN45004B); V
is the maximum unilateral power gain, assuming s
collector-base breakdown voltage I
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
insertion power gain
output voltage
(p+q+r)
= 793.25 MHz.
PARAMETER
p
= V
o
; V
q
= V
o
6 dB; f
I
I
I
I
I
I
f = 1 GHz
I
T
I
f = 1 GHz; T
note 2
C
C
E
E
C
C
C
C
C
amb
f = 900 MHz
f = 2 GHz
= 0.1 mA; I
= 0; V
= 0.1 mA; I
= 0.1 mA; I
=70 mA ; V
= 0; V
= 70 mA; V
= 70 mA; V
= 70 mA; V
p
= 25 C
= 795.25 MHz; f
4
CB
CB
12
CONDITIONS
is zero and
= 10
= 12 V; f = 1 MHz
amb
E
B
C
CE
CE
CE
CE
= 0
= 0
= 0
= 25 C
= 12 V;
= 12 V;
= 12 V;
=8 V
q
G
= 803.25 MHz; f
UM
=
10 log
item can replace BFQ591
60
MIN.
------------------------------------------------------- - dB
1
r
= 803.25 MHz;
s
90
0.8
7
11
5.5
10
700
11
TYP.
s
2
21
1
2
20
15
3
100
250
MAX.
s
22
2
V
V
V
nA
pF
GHz
dB
dB
dB
mV
UNIT
.

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