maq5602f Hope Microelectronics co., Ltd, maq5602f Datasheet - Page 2

• Manufacturer Part Number: maq5602f
• Description: Npn Sige Rf Powertransistor
• Manufacturer: Hope Microelectronics co., Ltd

MAQ5602F
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-89 SMD package.
an output device, depending on the specific app-
lication.
□ FEATURES
□ APPLICATIONS
□ MAXIMUM RATINGS
o 4.8 Volt operation
o P1dB 28 dBm @f=465MHz
o Power gain 10 dB @f=465MHz
o Hand-held radio equipment in common
The THN5602F is a low cost, NPN medium power
SYMBOL
The THN5602F can be used as a driver device or
emitter class-AB operation in 450 MHz
communication band.
Tel:[phone] Fax:[phone] E-mail: [e-mail]
V
V
V
Ic
P
T
T
STG
J
CBO
CEO
EBO
T
NPN SiGe RF POWER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Juction Temperature
TRANSISTOR
PARAMETER
Open Emitter
Open Base
Open Collector
Ts = 60℃ ; note 1
This item can replace THN5602F
PIN CONFIGURATION
CONDITION
PIN NO
1
2
3
4
4
SYMBOL
b
c
e
c
http://www.hoperf.com
-65 ~ 150
VALUE
350
150
20
base
collector
emitter
collector
8
4
1
DESCRIPTION
SOT-89
UNIT
mA
W
℃
℃
V
V
V