ntmd4184 ON Semiconductor, ntmd4184 Datasheet

no-image

ntmd4184

Manufacturer Part Number
ntmd4184
Description
Power Mosfet And Schottky Diode
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ntmd4184PFR2G
Manufacturer:
ON Semiconductor
Quantity:
1 600
Part Number:
ntmd4184PFR2G
Manufacturer:
ON/安森美
Quantity:
20 000
NTMD4184PF
Power MOSFET and
Schottky Diode
-30 V, -4.0 A, Single P-Channel with 20 V,
2.2 A, Schottky Barrier Diode
Features
Applications
© Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
MOSFET MAXIMUM RATINGS
SCHOTTKY MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current R
Power Dissipation
R
Continuous Drain
Current R
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward
Current, (Note 1)
Design Flexibility
Conduction Losses
FETKYt Surface Mount Package Saves Board Space
Independent Pin-Out for MOSFET and Schottky Allowing for
Low R
Optimized Gate Charge to Minimize Switching Losses
This is a Pb-Free Device
Disk Drives
DC-DC Converters
Printers
qJA
qJA
qJA
(Note 1)
(Note 2)
t < 10 s (Note 1)
DS(on)
qJA
qJA
qJA
(Note 1)
(Note 2)
t < 10 s
MOSFET and Low V
Rating
Steady
State
T
t
A
p
= 10 ms
= 25°C,
T
T
T
T
T
T
T
T
T
(T
A
A
A
A
A
A
A
A
A
t < 10 s
Steady
State
J
= 25°C
= 25°C
= 25°C
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
(T
= 25°C unless otherwise stated)
F
J
Schottky to Minimize
= 25°C unless otherwise stated)
T
Symbol
J
V
V
V
, T
I
P
P
P
V
RRM
DSS
DM
T
I
I
I
I
I
GS
D
D
D
S
F
D
D
D
R
L
STG
-55 to
Value
+150
-3.3
-2.6
-2.3
-1.8
0.77
-4.0
-3.2
2.31
-1.3
-30
±20
-10
260
1.6
2.2
3.2
20
20
1
Unit
°C
°C
W
W
W
V
V
A
A
A
A
A
V
V
A
†For information on tape and reel specifications,
NTMD4184PFR2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
G
V
V
8
P-Channel MOSFET
(BR)DSS
-30 V
R
20 V
Device
Max
1
ORDERING INFORMATION
4184PF = Device Code
A
Y
WW
G
P-CHANNEL MOSFET
S
SCHOTTKY DIODE
http://onsemi.com
165 mW @ -4.5 V
CASE 751
95 mW @ -10 V
STYLE 18
D
SOIC-8
R
= Assembly Location
= Year
= Work Week
= Pb-Free Package
DS(on)
(Pb-Free)
Package
V
SOIC-8
0.58 V
F
Publication Order Number:
Max
MARKING DIAGRAM
& PIN ASSIGNMENT
Max
Schottky Diode
8
1
2500/Tape & Reel
C C D D
A A S G
NTMD4184PF/D
4184PF
AYWW
Shipping
A
C
G
I
-4.0 A
D
I
2.2 A
F
Max
Max

Related parts for ntmd4184

ntmd4184 Summary of contents

Page 1

... ORDERING INFORMATION Device Package Shipping NTMD4184PFR2G SOIC-8 2500/Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMD4184PF/D Max D -4 Max F 2.2 A † ...

Page 2

... SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-TO-SOURCE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time NTMD4184PF qJC (T = 25°C unless otherwise noted) J Symbol Test Condition = 250 ...

Page 3

... V , DRAIN-TO-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 0.30 0.25 0.20 0.15 0.10 0. GATE-TO-SOURCE VOLTAGE (V) GS Figure 3. On-Resistance vs. Gate Voltage NTMD4184PF (T = 25°C unless otherwise noted) J Symbol Test Condition (T = 25°C unless otherwise noted) J Symbol Test Conditions 1 2 ...

Page 4

... 1 d(on GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance NTMD4184PF TYPICAL CHARACTERISTICS 10,000 1000 100 10 100 125 150 DRAIN-TO-SOURCE VOLTAGE (V) DS Figure 6. Drain-to-Source Leakage Current 25°C ...

Page 5

... 85° 25° -55°C J 0.1 0.1 0.3 0.5 0.7 0 INSTANTANEOUS FORWARD VOLTAGE (V) F Figure 13. Typical Forward Voltage NTMD4184PF TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) at Steady State (min pad) qJA 0.001 0.01 0.1 PULSE TIME (sec) at Steady State (1 inch sq pad) qJA 100 85° 0.1 1.1 1 ...

Page 6

... J 1E 85°C J 100E-6 10E 25°C J 1E-6 100E REVERSE VOLTAGE (V) R Figure 15. Typical Reverse Current 1000 100 10 0 NTMD4184PF TYPICAL CHARACTERISTICS 100E-3 10E-3 1E-3 100E-6 10E-6 1E-6 100E Figure 16. Maximum Reverse Current T = 25° REVERSE VOLTAGE (V) R Figure 17. Capacitance http://onsemi ...

Page 7

... J K 0.40 1.27 0.016 0.050 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTMD4184PF/D _ ...

Related keywords