ntmfs4707n ON Semiconductor, ntmfs4707n Datasheet

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ntmfs4707n

Manufacturer Part Number
ntmfs4707n
Description
Power Mosfet 30 V, 17 A, Single N-channel, Soic-8 Flat Lead
Manufacturer
ON Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4707N
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
ntmfs4707nT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NTMFS4707N
Power MOSFET
30 V, 17 A, Single N-Channel,
SOIC-8 Flat Lead
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size
2. Surface-mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 3
MAXIMUM RATINGS
THERMAL RESISTANCE MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
Power Dissipation (Note 1)
Continuous Drain Current
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche Energy
Lead Temperature for Soldering Purposes
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤ 10 s (Note 1)
Junction-to-Ambient – Steady State (Note 2)
Fast Switching Times
Low Gate Charge
Low R
Low Inductance SOIC-8 Package
These are Pb-Free Devices
Notebooks, Graphics Cards
DC-DC Converters
Synchronous Rectification
(Cu area = 1.127 in sq [1 oz] including traces).
(Cu area = 0.412 in sq).
(Note 1)
(Note 2)
(V
L = 10 mH, R
(1/8” from case for 10 s)
DD
= 25 V, V
DS(on)
G
GS
Parameter
Parameter
= 25 W)
= 10 V, I
(T
J
= 25°C unless otherwise stated)
t ≤ 10 s
t ≤ 10 s
Steady
Steady
Steady
PK
State
State
State
= 7.0 A,
t
p
≤ 10 ms
T
T
T
T
T
T
T
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
Symbol
R
R
R
V
T
V
E
I
T
P
P
qJA
qJA
qJA
DSS
DM
STG
T
I
I
I
GS
AS
D
D
S
D
D
J
L
,
Value
122.5
-55 to
Value
10.2
6.25
6.25
±20
150
245
260
55
20
7.4
2.3
6.9
4.9
1.0
30
17
51
1
°C/W
Unit
Unit
mJ
°C
°C
W
W
V
V
A
A
A
A
†For information on tape and reel specifications,
NTMFS4707NT1G SOIC-8 FL
NTMFS4707NT3G
SOIC-8 FLAT LEAD
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
(BR)DSS
(Note: Microdot may be in either location)
30 V
CASE 488AA
Device
STYLE 1
4707N = Specific Device Code
A
Y
WW
G
ORDERING INFORMATION
1
http://onsemi.com
G
13.5 mW @ 4.5 V
= Assembly Location
= Year
= Work Week
= Pb-Free Package
10 mW @ 10 V
R
SOIC-8 FL
Package
(Pb-Free)
(Pb-Free)
DS(on)
N-Channel
MARKING DIAGRAM &
Publication Order Number:
D
PIN ASSIGNMENT
Typ
S
S
S
G
S
1500 / T ape & Reel
5000 / T ape & Reel
NTMFS4707N/D
AYWW G
4707N
Shipping
D
D
G
I
D
17 A
Max
D
D

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ntmfs4707n Summary of contents

Page 1

... Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NTMFS4707NT1G SOIC-8 FL 1500 / T ape & Reel (Pb-Free) NTMFS4707NT3G SOIC-8 FL 5000 / T ape & Reel (Pb-Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

... DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. NTMFS4707N (T = 25°C unless otherwise specified) J Symbol Test Condition = 250 mA V ...

Page 3

... DRAIN CURRENT (AMPS) D, Figure 3. On-Resistance vs. Drain Current and Temperature 2 1 1.6 1.4 1.2 1.0 0.8 0.6 -50 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature NTMFS4707N TYPICAL CHARACTERIZATIONS 25° 0.018 T = 25°C J 0.014 0.010 ...

Page 4

... SINGLE PULSE 100 T = 25° 0.1 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTMFS4707N TYPICAL CHARACTERIZATIONS 25° 4 Drain-To-Source Voltage vs. Total Charge ...

Page 5

... D 5.15 BSC D1 4.50 4.90 5.10 D2 3.50 --- 4.22 E 6.15 BSC E1 5.50 5.80 6.10 E2 3.45 --- 4.30 e 1.27 BSC G 0.51 0.61 0. 0.51 --- --- L 0.51 0.61 0.71 L1 0.05 0.17 0.20 M 3.00 3.40 3. --- 12 SOLDERING FOOTPRINT 1.270 0.750 4X 1.000 0.965 2X 0.905 2X 4.530 0.475 2X 1.530 4.560 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS4707N/D ...

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