std1nc60 STMicroelectronics, std1nc60 Datasheet - Page 3

• Manufacturer Part Number: std1nc60
• Description: N-channel 600v - 7ohm - 1.4a - Dpak/ipak Powermesh??ii Mosfet
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
d(on)
Q
Q
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
rr
gs
gd
c
r
f
g
rr
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
SD
SD
DD
G
DD
GS
DD
DD
G
= 4.7
= 4.7
= 1.4 A, V
= 1.4 A, di/dt = 100A/µs,
= 300V, I
= 480V, I
= 10V
= 100V, Tj = 150° C
= 480V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
D
D
D
GS
= 0.7 A
= 1.4 A,
= 1.4 A,
= 10V
= 10V
= 0
Thermal Impedance
Min.
Min.
Min.
Typ.
Typ.
Typ.
500
950
8.5
2.8
2.8
3.8
25
34
8
8
9
Max.
Max.
Max.
11.5
1.4
5.6
1.6
STD1NC60
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
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