std2nk70z STMicroelectronics, std2nk70z Datasheet - Page 3

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std2nk70z

Manufacturer Part Number
std2nk70z
Description
N-channel 700 V - 6 W - 1.6 A Dpak/ipak Zener-protected Supermeshtm Mosfet
Manufacturer
STMicroelectronics
Datasheet

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STD2NK70Z - STD2NK70Z-1
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2. I
Table 2.
Table 3.
Symbol
Rthj-case
V
SD
Rthj-amb
Symbol
dv/dt
E
ESD(G-S)
I
V
I
AS
DM
V
V
AS
T
≤ 1.6A, di/dt ≤ 200A/µs, V
P
DGR
T
I
I
T
GS
stg
DS
D
D
tot
J
j
(1)
(2)
Avalanche characteristics
Absolute maximum ratings
Thermal data
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ)
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
DD
≤ V
(BR)DSS
Parameter
Parameter
, Tj ≤ T
C
GS
= 25°C
GS
= 20 kΩ)
JMAX
= 0)
C
C
= 25°C
= 100°C
55 to 150
Value
2000
± 30
0.36
700
700
1.6
6.4
4.5
2.78
45
100
300
1
Value
110
1.6
Electrical ratings
W/°C
°C/W
°C/W
Unit
V/ns
°C
W
°C
V
V
V
A
A
A
V
Unit
mJ
A
3/16

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