std22nm20n STMicroelectronics, std22nm20n Datasheet - Page 3

• Manufacturer Part Number: std22nm20n
• Description: N-channel 200v - 0.088ohm - 22a Dpak Ultra Low Gate Charge Mdmesh Ii Mosfet
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (T
Table 6: On/Off
Table 7: Dynamic
(**) C
Table 8: Source Drain Diode
(1) Pulse width limited by safe operating area.
(2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
C
V
Symbol
Symbol
Symbol
I
R
oss eq. (**)
V
V
SDM
(BR)DSS
g
t
t
oss eq.
I
I
I
I
C
SD
DS(on)
C
r(Voff)
GS(th)
C
Q
d(on)
Q
GSS
fs
RRM
RRM
DSS
R
I
Q
Q
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
r
gs
gd
G
f
(2)
rr
rr
g
(2)
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitiance
Gate Input Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
V
f= 1MHz Gate DC Bias = 0
Test Sgnal Level = 20 mV
Open Drain
V
R
(see Figure 15)
V
V
(see Figure 19)
I
I
V
(see test circuit, Figure 17)
I
V
(see test circuit, Figure 17)
D
SD
SD
SD
DS
DS
GS
DS
GS
DS
DS
GS
DD
DD
GS
DD
DD
G
= 1mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7 V
= 20 A, V
= 20 A, di/dt = 100 A/µs
= 20 A, di/dt = 100 A/µs
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10V, I
= 15 V
= 25V, f = 1 MHz, V
= 0 V, V
= 100 V, I
= 100 V, I
= 10 V
= 100V, T
= 100V, T
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
GS
I
D
D
DS
GS
D
GS
=11 A
D
D
= 11 A
j
j
= 250 µA
= 0
= 25°C
= 150°C
= 0 V to 400 V
= 10 V
= 11 A
= 20 A,
= 0
C
= 125 °C
GS
= 0
oss
Min.
Min.
Min.
200
3.5
when V
DS
0.088
1642
Typ.
Typ.
Typ.
12.8
increases from 0 to 80% V
800
330
130
225
160
960
225
4.2
40
15
40
32
25
15
11
8
5
6
STD22NM20N
0.105
Max.
Max.
Max.
100
1.3
10
50
22
88
1
5
Unit
Unit
Unit
µA
µA
nC
nC
nC
µC
µC
nA
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
3/10
V
V
S
A
A
V
A
A
DSS