std3n30l STMicroelectronics, std3n30l Datasheet
std3n30l
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std3n30l Summary of contents
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... POWER MOS TRANSISTOR IPAK TO-251 (Suffix ”-1”) INTERNAL SCHEMATIC DIAGRAM Value 300 300 100 0.4 -65 to 150 150 STD3N30L DPAK TO-252 (Suffix ”T4”) Unit 1/10 ...
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... STD3N30L THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink t hc- sin k T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Parameter I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width limited by T max Single Pulse Avalanche Energy ...
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... D GS Test Conditions Min. = 240 Test Conditions Min di/dt = 100 200 150 C j Thermal Impedance STD3N30L Typ. Max. Unit 70 100 ns 150 210 ns 115 Typ. Max. Unit ...
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... STD3N30L Derating Curve Transfer Characteristics Static Drain-source On Resistance 4/10 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage ...
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... Capacitance Variations Normalized On Resistance vs Temperature Turn-off Drain-source Voltage Slope STD3N30L Normalized Gate Threshold Voltage vs Temperature Turn-on Current Slope Cross-over Time 5/10 ...
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... STD3N30L Switching Safe Operating Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/10 Accidental Overload Area Fig. 2: Unclamped Inductive Waveforms ...
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... Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STD3N30L Fig. 4: Gate Charge Test Circuit 7/10 ...
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... STD3N30L TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 0.8 L2 8/10 inch MAX. MIN. TYP. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.012 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 1 0.031 MAX. 0.094 ...
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... H 9.35 L2 0.8 L4 0.6 H DETAIL ”A” inch MAX. MIN. TYP. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 0.031 1 0.023 DETAIL ”A” STD3N30L MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 0.039 0068772-B 9/10 ...
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... STD3N30L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...