vtp1012 PerkinElmer, vtp1012 Datasheet

vtp1012

Manufacturer Part Number

vtp1012

Description

Vtp Process Photodiodes

Manufacturer

PerkinElmer

Datasheet

1.VTP1012.pdf (1 pages)

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PRODUCT DESCRIPTION

Small area planar silicon photodiode in a “flat”

window TO-46 package. Cathode is common to

the case. These diodes exhibit low dark current

under reverse bias and fast speed of response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

SYMBOL

VTP Process Photodiodes

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

TC V

TC I

NEP

range

1/2

Short Circuit Current

Open Circuit Voltage

Dark Current

Shunt Resistance

Junction Capacitance

Responsivity

Sensitivity

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

Temperature Coefficient

CHARACTERISTIC

2850 K

H = 100 fc, 2850 K

940 nm

@ Peak

H = 100 fc, 2850 K

2850 K

H = 0, VR = 50 V

H = 0, V = 10 mV

H = 0, V = 15 V

TEST CONDITIONS

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

(See also VTP curves, page 46)

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

Min.

400

CHIP ACTIVE AREA: .0025 in

CASE 17 TO-46 HERMETIC

1.5 x 10

8.7 x 10

VTP1012

inch (mm)

.011

Typ.

-2.0

±35

350

925

140

.20

.55

-14

(Typ.)

VTP1012

-40°C to 110°C

(1.6 mm

1150

Max.

)

cm Hz

A/(W/cm

Degrees

UNITS

mV/°C

%/°C

A/W

µA

/ W

)

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