tsdf2005w Vishay, tsdf2005w Datasheet - Page 2

• Manufacturer Part Number: tsdf2005w
• Description: 25 Ghz Silicon Npn Planar Rf Transistor
• Manufacturer: Vishay

Electrical DC Characteristics
T
Electrical AC Characteristics
T
*) G
TSDF2005W
Vishay Semiconductors
2 (4)
www.vishay.com
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Transition frequency
Collector-base capacitance
Collector-emitter capacitance V
Emitter-base capacitance
Noise figure
Power gain,
maximum stable gain
Transducer gain
Third order intercept point
at output
1 dB compression point
amb
amb
ms
= 25 C, unless otherwise specified
= 25 C, unless otherwise specified
= | S
Parameter
21e
Parameter
/S
12e
|
V
V
V
V
Z
V
Z
V
Z
V
Z
V
Z
CE
CB
CE
EB
CE
S
CE
S
CE
S
CE
S
CE
S
= Z
= Z
= Z
= Z
= Z
= 0.5 V, f = 1 MHz
= 2 V, I
= 2 V, f = 1 MHz
= 2 V, f = 1 MHz
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
Sopt
Sopt
L
L
L
= 50 , f = 2 GHz
= 50 , f = 2 GHz
= 50 , f = 2 GHz
V
V
V
I
I
V
C
C
Test Conditions
CE
CB
EB
CE
, Z
, Z
= 1 mA, I
= 5 mA, I
C
C
C
C
C
C
= 1 V, I
= 5 V, V
= 5 V, I
= 2 V, I
L
L
Test Conditions
= 10 mA, f = 1 GHz
= 2 mA,
= 5 mA,
= 5 mA,
= 10 mA,
= 10 mA,
= Z
= Z
Lopt
Lopt
C
E
B
B
C
BE
, f = 2 GHz
, f = 2 GHz
= 0
= 0
= 0
= 0.5 mA
= 20 mA
= 0
G
pe
| S
V
Symbol
Symbol
P
V
(BR)CEO
= G
I
C
I
I
C
C
21e
IP
–1dB
CBO
CEsat
h
CES
EBO
f
F
T
cb
ce
eb
FE
3
ms
|
2
*)
Min.
Min.
3.5
50
14
Document Number 85085
Typ.
Typ.
0.05
100
0.1
0.3
0.3
1.2
25
21
17
15
5
Rev. 3, 02–May–02
Max.
Max.
0.25
0.08
100
100
150
1
dBm
dBm
GHz
Unit
Unit
nA
pF
pF
pF
dB
dB
dB
V
V
A
A