M74VHC1GT08DFT1G ON Semiconductor, M74VHC1GT08DFT1G Datasheet - Page 2

IC GATE AND SGL 2INP TTL SOT-353

M74VHC1GT08DFT1G

Manufacturer Part Number
M74VHC1GT08DFT1G
Description
IC GATE AND SGL 2INP TTL SOT-353
Manufacturer
ON Semiconductor
Series
74VHCr

Specifications of M74VHC1GT08DFT1G

Logic Type
AND Gate
Number Of Inputs
2
Number Of Circuits
1
Current - Output High, Low
8mA, 8mA
Voltage - Supply
3 V ~ 5.5 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Logic Family
VHC
Logical Function
AND
Number Of Elements
1
High Level Output Current
-8mA
Low Level Output Current
8mA
Operating Supply Voltage (typ)
3.3/5V
Operating Temp Range
-55C to 125C
Package Type
SC-88A
Number Of Outputs
1
Technology
CMOS
Mounting
Surface Mount
Pin Count
5
Operating Temperature Classification
Military
Quiescent Current
1uA
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
3V
Output Current
8mA
No. Of Inputs
2
Supply Voltage Range
3V To 5.5V
Logic Case Style
SOT-353
No. Of Pins
5
Operating Temperature Range
-55°C To +125°C
Family Type
VHC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M74VHC1GT08DFT1G
M74VHC1GT08DFT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M74VHC1GT08DFT1G
Manufacturer:
ON Semiconductor
Quantity:
6
Part Number:
M74VHC1GT08DFT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
M74VHC1GT08DFT1G
0
Company:
Part Number:
M74VHC1GT08DFT1G
Quantity:
60 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
Device Junction Temperature versus
Time to 0.1% Bond Failures
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Symbol
Symbol
I
Temperature °C
Latchup
V
V
V
I
V
V
t
T
V
I
I
q
V
OUT
P
r
OUT
I
T
T
ESD
OUT
T
OK
CC
stg
CC
IK
JA
CC
, t
IN
IN
A
D
L
J
Junction
f
100
110
120
130
140
80
90
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 s
Junction temperature under bias
Storage temperature
ESD Withstand Voltage
Latchup Performance
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
CC
and GND
Characteristics
Characteristics
Above V
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
CC
and Below GND at 125°C (Note 4)
http://onsemi.com
Charged Device Model (Note 3)
Human Body Model (Note 1)
V
OUT
Machine Model (Note 2)
2
< GND; V
V
V
Figure 3. Failure Rate vs. Time Junction Temperature
SC−88A, TSOP−5
CC
CC
High or Low State
High or Low State
SC−88A, TSOP−5
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
1
OUT
1
V
V
CC
CC
> V
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
= 0
= 0
CC
10
Min
−55
3.0
0.0
0.0
0.0
0
0
−0.5 to V
TIME, YEARS
−0.5 to +7.0
−0.5 to +7.0
−65 to +150
−0.5 to 7.0
> 2000
Value
> 200
+150
±500
−20
+20
+25
+50
200
333
260
N/A
CC
+ 0.5
+125
Max
V
100
5.5
5.5
5.5
20
100
CC
°C/W
Unit
Unit
ns/V
mW
mA
mA
mA
mA
mA
1000
°C
°C
°C
°C
V
V
V
V
V
V
V

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