am42dl6402g Meet Spansion Inc., am42dl6402g Datasheet - Page 59

• Manufacturer Part Number: am42dl6402g
• Description: 64 Mbit 8m X8bit/4m X16bit Flash Memory And Sram Preliminary
• Manufacturer: Meet Spansion Inc.

FLASH ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 3.0 V V
2. Under worst case conditions of 90 C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
FINE-PITCH BGA CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
FLASH DATA RETENTION
58
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Accelerated Byte/Word Program Time
Word Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
12 for further information on command definitions.
Parameter
Current
Symbol
C
C
C
C
OUT
IN2
IN3
IN
A
Parameter Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP#/ACC Pin Capacitance
= 25°C, f = 1.0 MHz.
Description
SS
SS
CC
Word Mode
Byte Mode
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 2.7 V, 1,000,000 cycles.
P R E L I M I N A R Y
Typ (Note 1)
CC
Am42DL6402G
= 3.0 V, one pin at a time.
0.4
56
42
28
5
4
7
Max (Note 2)
150
120
210
126
84
5
Test Setup
V
V
V
V
Test Conditions
OUT
IN
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
= 0
Min
= 0
CC
150 C
125 C
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
µs
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Typ
11
12
14
17
Comments
V
January 31, 2003
+100 mA
CC
12.5 V
Min
Max
10
20
Max
+ 1.0 V
14
16
16
20
Years
Years
Unit
Unit
pF
pF
pF
pF