lrs1329 Sharp Microelectronics of the Americas, lrs1329 Datasheet - Page 25

• Manufacturer Part Number: lrs1329
• Description: Stacked Chip Flash Sram
• Manufacturer: Sharp Microelectronics of the Americas

SHARP
AC Electrical.Characteristics)
When the F-E
For the details
write protected.
For the lockout
Data protection
1) Data protection
the flash memory is disabled,
2) Data protection
When the level of Vpp is lower than VPPLK(lockout
When a high voltage
For further
refer to the specification.
flash memory is disabled.
operating
1) Protecting
By setting
Parameter and main blocks
System program, etc.,
Noises having a level
under specific
Such noises,
commands, causing undesired
To protect
appropriate:
16.Flash Memory Data Protection
with the flash memory should have the following
a F?? to low, only the boot block can be protected
the data stored
information
when induced onto F-W signal
is kept low during power up and power down sequence, write
data in specific
operating
during
of F-E
voltage,
thorough F-s
through Vpp
is applied
can be locked by storing
exceeding
voltage
control,
on setting/resetting
refer
conditions
cannot be locked.
All blacks are locked and the data in the blocks are completely
in the flash memory against
(See 5.Command Definitions
memory updating.
write protecting
transition
to the specification.
block
to F-E,
the limit
refer
on some systems.
LRS1329
to the specification.
overwrite
specified
or power supply may be interpreted
of block bit,and
all blocks.
them in the boot block.
operation
voltage),
(See Chapter 11. DC Characteristics
in the specification
P.5)
unwanted overwriting,
write protect
is enabled for all blocks.
(See chapter
write operation
against
controlling
overwriting.
designs,
operation
12. Flash Memory
may be generated
of F-e
on the
systems
as false
as
on
and F-D,
23
P-10)
.