am45dl3208g Advanced Micro Devices, am45dl3208g Datasheet - Page 42

• Manufacturer Part Number: am45dl3208g
• Description: Stacked Multi-chip Package Mcp Flash Memory And Sram
• Manufacturer: Advanced Micro Devices

Pseudo SRAM DC AND OPERATING CHARACTERISTICS (NOTE 1)
Notes:
1. T
2. Overshoot: V
3. Undershoot: –1.0V if pulse width
4. Overshoot and undershoot are sampled, not 100% tested.
5. Stable power supply required 200 µs before device operation.
40
Parameter
Symbol
I
I
CC1
CC2
V
I
V
V
A
I
I
V
I
SB1
I
LO
CC
SB
OH
= –40
LI
OL
IH
IL
s
s
°
to 85
Input Leakage Current
Output Leakage Current
Operating Power Supply Current
Average Operating Current
Average Operating Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Standby Current (TTL)
Standby Current (CMOS)
CC
+1.0V if pulse width
°
C, otherwise specified.
Parameter Description
≤
20 ns.
≤
20 ns.
P R E L I M I N A R Y
V
CE1#s = V
V
I
CE2s = V
Cycle time = 1 µs, 100% duty,
I
CE2 ≥ V
V
Cycle time = Min., I
100% duty, CE1#s = V
V
I
I
CE1#s = V
inputs = V
CE1#s ≥ V
0.2 V (CE1#s controlled) or CE2 ≤
0.2 V (CE2s controlled), CIOs =
V
IO
IO
OL
OH
IN
IH
IN
IH
SS
Am45DL3208G
= 0 mA, CE1#s = V
= 0 mA, CE1#s ≤ 0.2 V,
, V
= 2.0 mA
= V
or WE# = V
≥ V
= –1.0 mA
or V
IN
CC
SS
= V
CC
CC
Test Conditions
IH
to V
– 0.2 V
IH
IH
CC
, Other input = 0 ~ V
IH
, V
– 0.2 V, V
IL
, CE2s = V
or V
, CE2 = V
– 0.2 V, CE2 ≥ V
= or V
CC
IN
IL
= V
IL
, V
IO
IO
IH
IH
= V
IN
= 0 mA,
or V
IL
IL
IL
IL
≤ 0.2 V or
, Other
,
, CE2s =
SS
or OE# =
IL
to V
CC
CC
CC
–
(Note 3)
–1.0
–1.0
–0.2
Min
2.2
2.2
Typ
V
(Note 2)
March 12, 2004
CC
Max
100
1.0
1.0
0.4
0.4
0.3
30
2
3
+0.2
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
V
V