k4t1g084qm-zcd5 Samsung Semiconductor, Inc., k4t1g084qm-zcd5 Datasheet - Page 25

• Manufacturer Part Number: k4t1g084qm-zcd5
• Description: 1gb M-die Ddr2 Sdram Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

1Gb M-die DDR2 SDRAM
18. tIS and tIH (input setup and hold) derating.
dress Slew
dress Slew
mand/Ad-
mand/Ad-
(V/ns)
(V/ns)
Com-
Com-
rate
rate
0.25
0.15
0.25
0.15
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
2.0 V/ns
-1000
+187
+179
+167
+150
+125
+150
+143
+133
+120
+100
-110
-175
-285
-350
-525
-800
-100
-168
-200
-325
-517
'tIS
'tIS
+83
+67
-11
-25
-43
-67
-13
-22
-34
-60
-5
0
0
2.0 V/ns
'tIS and 'tIH Derating Values for DDR2-667, DDR2-800
tIS, tIH Derating Values for DDR2-400, DDR2-533
-1125
'tIH
-125
-188
-292
-500
-708
'tIH
-125
-188
-292
-500
-708
+94
+89
+83
+75
+45
+21
-375
+94
+89
+83
+75
+45
+21
-375
-14
-31
-54
-83
-14
-31
-54
-83
0
0
CK,CK Differential Slew Rate
CK,CK Differential Slew Rate
1.5 V/ns
+217
+209
+197
+180
+155
+113
+180
+173
+163
+150
+130
-145
-255
-320
-495
-770
-138
-170
-295
-487
-970
'tIS
'tIS
+30
+19
+97
+30
+25
+17
-13
-37
-80
-30
-70
+5
+8
-4
Page 25 of 29
1.5 V/ns
-1095
+124
+105
+124
+105
+119
+113
+119
+113
'tIH
-158
-262
-345
-470
-678
'tIH
-158
-262
-345
-470
-678
+75
+51
+30
+16
+75
+51
+30
+16
-24
-53
-95
-24
-53
-95
-1
-1
1.0 V/ns
+247
+239
+227
+210
+185
+143
+210
+203
+193
+180
+160
+127
-225
-290
-465
-740
-108
-140
-265
-457
-940
'tIS
-115
'tIS
+60
+49
+35
+17
+60
+55
+47
+38
+26
-50
-40
-7
0
1.0 V/ns
-1065
+154
+149
+143
+135
+105
+154
+149
+143
+135
+105
'tIH
-128
-232
-315
-440
-648
'tIH
-128
-232
-315
-440
-648
+81
+46
+29
+81
+60
+46
+29
-23
-65
-23
-65
+6
+6
60
Rev.1.1 Jan. 2005
DDR2 SDRAM
Units
Units
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
Notes
Notes
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1