k4t51043qg-hcf7 Samsung Semiconductor, Inc., k4t51043qg-hcf7 Datasheet - Page 32

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k4t51043qg-hcf7

Manufacturer Part Number
k4t51043qg-hcf7
Description
512mb G-die Ddr2 Sdram Specification
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K4T51043QG
K4T51083QG
K4T51163QG
V
V
Hold Slew Rate tangent line [ V
V
V
Rising Signal
V
V
IL(dc)
IL(ac)
DDQ
REF(dc)
IH(ac)
IH(dc)
Figure 11 - IIIustration of tangent line for tDH (differential DQS, DQS)
DQS
DQS
max
max
min
min
V
SS
=
dc to V
dc to V
region
region
REF
REF
∆TR
tDS
tangent
REF(dc)
line
Hold Slew Rate
Falling Signal
- Vil(dc)max ]
32 of 45
tDH
∆TR
=
nominal
tangent line [ Vih(dc)min - V
line
tDS
tangent
∆TF
line
tDH
∆TF
nominal
line
Rev. 1.21 February 2008
REF(dc)
DDR2 SDRAM
]

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