k4t56163qi Samsung Semiconductor, Inc., k4t56163qi Datasheet - Page 29

no-image

k4t56163qi

Manufacturer Part Number
k4t56163qi
Description
256mb I-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
k4t56163qi-ZCCC
Manufacturer:
SAMSUNG
Quantity:
11 130
Part Number:
k4t56163qi-ZCD5
Manufacturer:
SAMSUNG
Quantity:
11 135
Part Number:
k4t56163qi-ZCD5
Manufacturer:
SAMSUNG
Quantity:
1 588
Part Number:
k4t56163qi-ZCE6
Manufacturer:
SAMSUNG
Quantity:
11 140
Part Number:
k4t56163qi-ZCE7
Manufacturer:
SAMSUNG
Quantity:
11 145
Company:
Part Number:
k4t56163qi-ZCF7
Quantity:
2 100
Company:
Part Number:
k4t56163qi-ZCF7
Quantity:
130
Company:
Part Number:
k4t56163qi-ZCF7
Quantity:
130
Company:
Part Number:
k4t56163qi-ZCF7
Quantity:
680
K4T56163QI
V
V
Hold Slew Rate tangent line [ V
V
V
V
V
Rising Signal
IL(dc)
IL(ac)
DDQ
REF(dc)
IH(ac)
IH(dc)
Figure 11 - IIIustration of tangent line for tDH (differential DQS, DQS)
DQS
DQS
max
max
min
min
V
SS
=
dc to V
dc to V
region
region
REF
REF
∆TR
tDS
tangent
REF(dc)
line
29 of 42
Hold Slew Rate
Falling Signal
- Vil(dc)max ]
tDH
∆TR
=
nominal
tangent line [ Vih(dc)min - V
line
tDS
tangent
∆TF
line
tDH
∆TF
nominal
line
REF(dc)
Rev. 1.0 October 2007
DDR2 SDRAM
]

Related parts for k4t56163qi