k4s161622d Samsung Semiconductor, Inc., k4s161622d Datasheet - Page 16
k4s161622d
Manufacturer Part Number
k4s161622d
Description
512k X 16bit X 2 Banks Synchronous Dram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4S161622D.pdf
(41 pages)
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K4S161622D
CMOS SDRAM
5. Write Interrupted by Precharge & DQM
CLK
Note 3
WR
PRE
CMD
Note 2
DQM
DQ
D
D
D
D
0
1
2
3
Masked by DQM
*Note : 2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge
interrupt but only the other bank precharge of dual banks operation.