k4s640832n-lc75 Samsung Semiconductor, Inc., k4s640832n-lc75 Datasheet - Page 13

• Manufacturer Part Number: k4s640832n-lc75
• Description: 64mb N-die Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

16.0 IBIS SPECIFICATION
I
I
K4S640832N
K4S641632N
OH
OL
Characteristics (Pull-down)
Characteristics (Pull-up)
Voltage
Voltage
3.45
3.30
3.00
2.70
2.50
1.95
1.80
1.65
1.50
1.40
1.00
0.20
3.45
3.30
3.00
1.95
1.80
1.65
1.50
1.40
1.00
0.85
0.65
0.40
(V)
(V)
200MHz/133MHz
200MHz/133MHz
I (mA)
-13.75
-17.75
-20.55
-23.55
-36.25
I (mA)
43.92
43.36
41.20
40.56
39.60
38.40
37.28
30.08
26.64
21.52
14.16
-0.35
-3.75
-6.65
-26.2
-46.5
Min
Min
-
-
-
200MHz/133MHz
200MHz/133MHz
-107.31
-158.34
-188.79
-199.01
-241.15
-351.68
155.82
153.72
148.40
146.02
141.75
136.08
131.39
105.84
-90.44
-137.9
-173.6
I (mA)
I (mA)
93.66
75.25
49.14
-51.87
-19.11
Max
Max
-1.68
-
13 of 15
-100
-200
-300
-400
-500
-600
250
200
150
100
50
0
0
0
0
0.5
0.5
200MHz/133MHz Pull-down
200MHz/133MHz Pull-up
1
1
I
I
OH
OH
I
I
OL
OL
Min (200MHz / 133MHz)
Max (200MHz / 133MHz)
Min (200MHz / 133MHz)
1.5
1.5
Max (200MHz / 133MHz)
Voltage
Voltage
Rev. 1.1 December 2007
Synchronous DRAM
2
2
2.5
2.5
3
3
3.5
3.5