k4s563233f Samsung Semiconductor, Inc., k4s563233f Datasheet - Page 10

• Manufacturer Part Number: k4s563233f
• Description: 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
• Manufacturer: Samsung Semiconductor, Inc.

K4S563233F - F(H)E/N/G/C/L/F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.)
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
3. Full Page Length : x32 : 64Mb(256) , 128Mb (256), 256Mb (512), 512Mb (512)
Function
Function
BA1
A8
A9
Address
0
0
1
1
0
1
Address
0
0
1
1
Write Burst Length
A7
A11~A10/AP
0
1
0
1
BA0
0
1
0
1
Test Mode
Mode Register Set
0
BA1
Single Bit
Mode Select
Length
"0" Setting for
Normal MRS
Burst
BA0 ~ BA1
Reserved
Reserved
Reserved
Type
BA0
Reserved Address
A9
A11 ~ A10/AP
0
Mode Select
EMRS for Mobile SDRAM
A6
0
0
0
0
1
1
1
1
A11 ~ A10/AP
A8
0
RFU
Normal MRS
A5
0
0
1
1
0
0
1
1
Reserved
Reserved
CAS Latency
Mode
*1
A7
0
A4
0
1
0
1
0
1
0
1
A9
A6
0
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
W.B.L
A9
RFU
1
2
3
*2
A8
A5
0
*1
A8
Test Mode
BA1 BA0
A3
A4
0
1
0
A7
0
10
Mode Select
Burst Type
A7
0
A3
Sequential
Interleave
0
A6
Type
mal MRS
for Nor-
Setting
A6
Mode
A2
0
0
0
0
1
1
1
1
CAS Latency
A5
A5
A1
0
0
1
1
0
0
1
1
A2
0
0
0
0
1
1
1
1
A4
RFU
A4
A0
A1
0
1
0
1
0
1
0
1
0
0
1
1
0
0
1
1
*1
A3
Mobile-SDRAM
PASR
A0
A3
BT
Burst Length
0
1
0
1
0
1
0
1
Size of Refreshed Array
Full Page
1/2 of Full Array
1/4 of Full Array
Reserved
Reserved
Reserved
A2
BT=0
A2
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
1
2
4
8
Burst Length
PASR
*3
A1
A1
May 2004
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0