k4s51323pf Samsung Semiconductor, Inc., k4s51323pf Datasheet - Page 10

• Manufacturer Part Number: k4s51323pf
• Description: 4m X 32bit X 4 Banks Mobile-sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4S51323PF-M(E)F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
NOTES:
1.RFU(Reserved for future use) should stay "0" during MRS cycle.
2.If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Function
Function
A8
A9
Address
0
0
1
1
0
1
BA1
Address
A12~A10/AP
0
0
1
1
Write Burst Length
A7
0
1
0
1
0
Test Mode
BA0
Mode Register Set
0
1
0
1
BA1
Single Bit
Mode Select
Length
"0" Setting for
Burst
Normal MRS
Reserved
Reserved
Reserved
BA0 ~ BA1
Mode Select
Type
EMRS for Mobile SDRAM
BA0
A9
0
Normal MRS
Reserved
Reserved
Mode
A12 ~ A10/AP
Reserved Address
A6
0
0
0
0
1
1
1
1
A8
A12 ~ A10/AP
0
RFU
A5
0
0
1
1
0
0
1
1
CAS Latency
*1
A4
0
1
0
1
0
1
0
1
A7
RFU
0
A9
A6
0
0
1
1
*1
Reserved
Reserved
Reserved
Reserved
Reserved
W.B.L
Latency
A9
*2
1
2
3
A5
Driver Strength
0
1
0
1
A8
A4
0
A8
Test Mode
Driver Strength
BA1 BA0
A3
0
1
0
A7
10
Mode Select
Burst Type
A7
Full
1/2
1/4
1/8
0
Sequential
Interleave
A3
A6
0
Type
mal MRS
A6
for Nor-
Setting
DS
Mode
CAS Latency
A5
A2
0
0
0
0
1
1
1
1
A5
A2
0
0
0
0
1
1
1
1
A1
0
0
1
1
0
0
1
1
A4
A4
RFU
A1
A0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Full Page Length x32 : 512Mb(512)
*1
A3
Mobile-SDRAM
A3
BT
A0
Burst Length
0
1
0
1
0
1
0
1
Size of Refreshed Area
PASR
1/2 of Full Array
1/4 of Full Array
Reserved
Reserved
Reserved
Full Page
A2
A2
BT=0
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
1
2
4
8
Burst Length
September 2004
PASR
A1
A1
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0