k4h1g0738b Samsung Semiconductor, Inc., k4h1g0738b Datasheet - Page 13

• Manufacturer Part Number: k4h1g0738b
• Description: Stacked 1gb B-die Ddr Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

DDR SDRAM stacked 1Gb B-die (x4/x8)
Note :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
16.0 AC Operating Conditions
17.0 AC Overshoot/Undershoot specification for Address and Control Pins
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and /CK inputs
Input Crossing Point Voltage, CK and /CK inputs
Parameter/Condition
Parameter
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.5V
0
Area = 4.5V-ns
AC overshoot/Undershoot Definition
0.5
0.6875
VDD
1.0
Overshoot
1.5
2.0
2.5
3.0
VIH(AC)
VID(AC)
Symbol
VIL(AC)
VIX(AC)
Tims(ns)
3.5
4.0
4.5
0.5*VDDQ-0.2
VREF + 0.31
5.0
Maximum Amplitude = 1.5V
5.5
Min
0.7
undershoot
GND
6.0
6.3125
DDR400
TBD
TBD
TBD
TBD
6.5
0.5*VDDQ+0.2
7.0
VREF - 0.31
VDDQ+0.6
Max
Rev. 1.5 June. 2005
Specification
DDR333
TBD
TBD
TBD
TBD
DDR SDRAM
Unit
V
V
V
V
DDR200/266
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
Note
1
2