mt18htf25672pdy Micron Semiconductor Products, mt18htf25672pdy Datasheet - Page 12

• Manufacturer Part Number: mt18htf25672pdy
• Description: Ddr2 Sdram Rdimm
• Manufacturer: Micron Semiconductor Products

Table 10: DDR2 I
Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8)
component data sheet
PDF: 09005aef80e935cd
htf18c64_128_256x72pdy.pdf - Rev. F 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads, I
t
is HIGH between valid commands; Address bus inputs are stable during dese-
lects; Data bus inputs are switching
CK (I
DD
OUT
),
t
RC =
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
DD
Notes:
),
Specifications and Conditions – 512MB (Continued)
t
RRD =
1. Value calculated as one module rank in this operating condition. All other module ranks
2. Value calculated reflects all module ranks in this operating condition.
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
t
RRD (I
in I
DD
DD2P
), AL =
DD
),
(CKE LOW) mode.
t
RCD =
t
RCD (I
t
RCD (I
DD
) - 1 ×
DD
); CKE is HIGH, S#
12
t
CK (I
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-667
2295
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
2205
-53E
Specifications
2115
-40E
Units
mA