mt18hts25672rhy-53e Micron Semiconductor Products, mt18hts25672rhy-53e Datasheet - Page 2

• Manufacturer Part Number: mt18hts25672rhy-53e
• Description: 2gb, 4gb X72, Ecc, Dr 200-pin Ddr2 Sdram Sordimm
• Manufacturer: Micron Semiconductor Products

Table 2:
Table 3:
Table 4:
PDF: 09005aef828665bd/Source: 09005aef828665a3
HTS18C_256_512x72RH.fm - Rev. B 5/08 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
MT18HTS25672RH(I)Y-667__
MT18HTS25672RH(I)Y-53E__
MT18HTS25672RH(I)Y-40E__
MT18HTS51272RH(I)Y-667__
MT18HTS51272RH(I)Y-53E__
MT18HTS51272RH(I)Y-40E__
Addressing
Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H256M8THN,
Part Numbers and Timing Parameters – 4GB Modules
Base device: MT47H512M8THM,
2
2
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT18HTS25672PY-667E1.
Module
Density
Module
Density Configuration
2GB
2GB
2GB
4GB
4GB
4GB
2GB, 4GB (x72, ECC, DR) 200-Pin DDR2 SDRAM SORDIMM
1
1
2Gb TwinDie DDR2 SDRAM
4Gb TwinDie DDR2 SDRAM
Configuration
512 Meg x 72
512 Meg x 72
512 Meg x 72
256 Meg x 72
256 Meg x 72
256 Meg x 72
2Gb TwinDie (256 Meg x 8)
2
16K (A0–A13)
8 (BA0–BA2)
Bandwidth
1K (A0–A9)
2 (S0#, S1#)
Bandwidth
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2GB
1KB
8K
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
Data Rate
4Gb TwinDie (512 Meg x 8)
©2007 Micron Technology, Inc. All rights reserved.
32K (A0–A14)
8 (BA0–BA2)
2 (S0#, S1#)
1K (A0–A9)
4GB
1KB
8K
(CL-
(CL-
Latency
Latency
t
t
5-5-5
4-4-4
3-3-3
Features
RCD-
5-5-5
4-4-4
3-3-3
RCD-
t
t
RP)
RP)