mt18hvf25672pdy-800 Micron Semiconductor Products, mt18hvf25672pdy-800 Datasheet - Page 9

• Manufacturer Part Number: mt18hvf25672pdy-800
• Description: 1gb, 2gb X72, Ecc, Dr 240-pin Ddr2 Sdram Vlp Rdimm
• Manufacturer: Micron Semiconductor Products

I
Table 9:
PDF: 09005aef8286b286/Source: 09005aef8286b2d2
HVF18c128_256x72D.fm - Rev. A 4/07 EN
Parameter/Condition
Operating one bank active-precharge current:
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
CL = CL (I
t
bus inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus inputs
are floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current: All device banks open;
t
inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
commands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
bus inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
reads; I
t
commands; Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
t
control and address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving
reads; I
t
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
DD
RC =
RCD =
CK =
RAS =
RP =
RAS =
RFC (I
CK =
Specifications
t
t
t
t
RP (I
DD
RC (I
CK (I
CK (I
t
t
OUT
OUT
t
RAS MAX (I
RAS MAX (I
RCD (I
) interval; CKE is HIGH, S# is HIGH between valid commands; Other
DD
DD
DD
DD
= 0mA; BL = 4, CL = CL (I
= 0mA; BL = 4, CL = CL (I
DD
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands; Address
),
DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the
512Mb (64 Meg x 8) component data sheet
); CKE is LOW; Other control and address bus
),
DD
t
t
RAS =
RC =
); CKE is HIGH, S# is HIGH between valid commands; Address
Notes:
DD
DD
t
t
),
),
CK =
DD
RC (I
t
RAS MIN (I
t
t
DD
RP =
RP =
t
CK =
Specifications and Conditions – 1GB
), AL = 0;
DD
t
CK (I
1. Value calculated as one module rank in this operating condition; all other module ranks in
2. Value calculated reflects all module ranks in this operating condition.
t
t
),
RP (I
RP (I
t
CK (I
t
I
RRD =
DD
DD
DD
2P (CKE LOW) mode.
DD
DD
),
DD
DD
t
DD
); CKE is HIGH, S# is HIGH between valid
CK =
t
); CKE is HIGH, S# is HIGH between valid
); CKE is HIGH, S# is HIGH between valid
RC =
), AL = 0;
), AL =
); REFRESH command at every
t
RRD (I
1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM VLP RDIMM
t
CK (I
t
RC (I
t
DD
RCD (I
DD
t
),
DD
CK =
),
t
t
DD
RCD =
),
CK =
t
t
DD
RAS =
t
CK =
t
4W
RAS =
CK =
t
CK (I
) - 1 ×
t
CK (I
t
OUT
t
t
RCD (I
CK (I
CK =
t
t
DD
t
CK (I
RAS MAX (I
t
CK =
RAS MIN (I
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
9
t
DD
),
CK (I
= 0mA; BL = 4,
DD
t
),
DD
DD
CK (I
t
),
CK (I
DD
); CKE is
); CKE is
);
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
DD
);
);
),
),
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
I
I
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
4R
2P
3P
0
1
5
6
7
1
1
2
2
1
2
2
1
2
2
2
1
1,098 1,008
1,260 1,170
1,818 1,593 1,323 1,098
1,908 1,683 1,368 1,098
4,140 3,240 3,060 2,970
2,763 2,223 2,088 2,043
-80E
-800
963
126
900
990
720
216
126
Electrical Specifications
©2007 Micron Technology, Inc. All rights reserved.
-667
873
126
810
900
630
216
126
-53E
783
918
126
720
810
540
216
990
126
-40E Units
783
873
126
630
720
450
216
810
126
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA