mt18gtf25672fdy-667 Micron Semiconductor Products, mt18gtf25672fdy-667 Datasheet - Page 6

• Manufacturer Part Number: mt18gtf25672fdy-667
• Description: 2gb X72, Dr 240-pin Ddr2 Sdram Fbdimm
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Table 6:
Table 7:
PDF:09005aef82b6453f/Source: 09005aef82b6451c
GTF18C256x72FD.fm - Rev. C 3/08 EN
Parameter
Parameter
Voltage on any signal pin relative to V
Voltage on V
Voltage on V
Voltage on V
DDR2 SDRAM device operating case temperature
AMB device operating case temperature
AMB supply voltage
DDR2 SDRAM supply voltage
Termination voltage
EEPROM supply voltage
SPD input high (logic 1) voltage
SPD input low (logic 0) voltage
RESET input high (logic 1) voltage
RESET input low (logic 0) voltage
Leakage current (RESET)
Leakage current (link)
CC
DD
TT
Absolute Maximum Ratings
Input DC Voltage and Operating Conditions
pin relative to V
pin relative to V
pin relative to V
Notes:
Notes:
Stresses greater than those listed in Table 6 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated in the device data sheet are not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. V
2. T
3. See applicable DDR2 SDRAM component data sheet for
1. During the initial power ramp, V
2. Applies to AMB and SPD.
3. Applies to SMBus and SPD bus signals.
4. Applies to AMB CMOS signal RESET#.
5. For all other AMB-related DC parameters, please refer to the high-speed differential link
t
settings. The
sustain <85°C operation.
100ms prior to the start of the DRAM initialization process. The 100ms of excess V
time must be less than 0.01 percent of the total DRAM powered-up time.
interface specification.
SS
REFI = 3.9µs above 85°C); see DDR2 SDRAM component data sheet.
SS
SS
C
IN
is specified at 95°C only when using 2X refresh timing (
should not be greater than V
SS
t
REFI parameter is used to specify the doubled refresh interval necessary to
Symbol
V
V
V
V
V
DDSPD
V
IH
IH
IL
IL
V
V
I
I
DD
(
(
CC
TT
(
(
L
L
DC
DC
DC
DC
2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
V
)
)
)
)
Symbol
6
IN
V
V
, V
V
T
DD
DD
CC
TT
C
CC
0.48 × V
OUT
.
may exceed V
1.455
1.425
Min
–0.6
–90
3.0
2.1
1.0
–5
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
Min
–0.3
–0.3
–0.5
–0.5
0
0
0.50 × V
DD
Nom
1.50
1.50
–
–
–
–
–
–
–
(MAX) and be as much as 1.8V for up to
DD
t
REFI and extended mode register
Max
1.75
1.75
110
1.8
1.8
t
Electrical Specifications
95
REFI = 7.8µs at or below 85°C;
0.52 × V
V
1.575
1.625
Max
DDSPD
3.6
0.8
0.5
©2007 Micron Technology, Inc. All rights reserved.
90
5
–
DD
Units
°C
°C
V
V
V
V
Units
µA
µA
V
V
V
V
V
V
V
V
DD
Notes
2, 3
Notes
voltage
1
1
2
3
3
4
3
4
5