mt8vddt6464hg-40b Micron Semiconductor Products, mt8vddt6464hg-40b Datasheet - Page 24

• Manufacturer Part Number: mt8vddt6464hg-40b
• Description: 256mb, 512mb X64, Sr Pc3200 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 20: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
pdf: 09005aef80b577e4, source: 09005aef80921669
DDA8C32_64x64HG.fm - Rev. D 9/04 EN
BYTE
36-40 Reserved
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
0
1
2
3
4
5
6
7
8
9
.
Number of SPD Bytes Used By Micron
Total Number of Bytes In SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels (V
SDRAM Cycle Time, (
SDRAM Access From Clock (
Module Configuration Type
Refresh Rate/type
SDRAM Device Width (Primary DDR SDRAM)
Error-checking DDR SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random Column
Access
Burst Lengths Supported
Number of Banks on DDR SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time, (
SDRAM Access From Clock (
SDRAM Cycle Time, (
SDRAM Access From CK , (
Minimum Row Precharge Time, (
Minimum Row Active to Row Active, (
Minimum RAS# to CAS# Delay, (
Minimum RAS# Pulse Width, (
Module Rank Density
Address and Command Setup Time, (
Address and Command Hold Time, (
Data/Data Mask Input Setup Time, (
Data/Data Mask Input Hold Time, (
DESCRIPTION
t
t
t
CK) CAS Latency = 3
CK) CAS Latency = 2.5
CK) CAS Latency = 2
t
AC) CAS Latency = 2
t
t
AC) CAS Latency = 3
AC) CAS Latency = 2.5
t
RAS)
t
RCD)
t
RP)
t
DD
DH)
t
t
DS)
IH)
t
Q)
IS)
t
RRD)
24
0.7ns (Set for PC2700
6ns (Set for PC2700
ENTRY (VERSION)
Unbuffered/Diff.
Fast/Concurrent
Auto Precharge
PC2100/PC1600
PC2100/PC1600
256MB, 512MB (x64, SR) PC3200
0.75ns (Set for
256MB, 512MB
Compatibility)
Compatibility)
Compatibility)
Compatibility)
7.5ns (Set for
0.40ns (-40B)
0.40ns (-40B)
DDR SDRAM
0.7ns (-40B)
3, 2.5 and 2
0.6ns (-40B)
0.6ns (-40B)
15ns (-40B)
10ns (-40B)
40ns (-40B)
7.8µs/SELF
15ns (-40B)
5ns (-40B)
SSTL 2.6V
1 clock
10, 11
2, 4, 8
None
None
Clock
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128
256
13
64
1
0
8
4
0
1
200-PIN DDR SODIMM
MT8VDDT3264H
0D
0A
1C
C0
3C
3C
80
08
07
01
40
00
04
50
70
00
82
08
00
01
0E
04
01
02
20
60
70
75
75
28
28
40
60
60
40
40
00
MT8VDDT12864H
©2004 Micron Technology, Inc.
0D
80
08
07
0B
01
40
00
04
50
70
00
82
08
00
01
0E
04
1C
01
02
20
C0
60
70
75
75
3C
28
3C
28
80
60
60
40
40
00