mt16htf25664ay Micron Semiconductor Products, mt16htf25664ay Datasheet - Page 21

• Manufacturer Part Number: mt16htf25664ay
• Description: Ddr2 Sdram Udimm
• Manufacturer: Micron Semiconductor Products

Table 15: DDR2 I
Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
PDF: 09005aef80f09084
htf16c64_128_256x64ay.pdf - Rev. G 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
t
HIGH between valid commands; Address bus inputs are stable during dese-
lects; Data bus inputs are switching
CK (I
DD
OUT
),
t
RC =
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
DD
Notes:
),
Specifications and Conditions – 4GB (Continued)
t
RRD =
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
t
RRD (I
in I
DD
DD2P
), AL =
DD
),
(CKE LOW) mode.
512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM
t
RCD =
t
RCD (I
t
RCD (I
DD
) - 1 ×
DD
); CKE is HIGH, S# is
21
t
CK (I
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
2776
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
-53E
2416
Units
mA