mt16htf25664az Micron Semiconductor Products, mt16htf25664az Datasheet - Page 7

• Manufacturer Part Number: mt16htf25664az
• Description: 2gb, 4gb X64, Dr 240-pin Ddr2 Sdram Udimm
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Table 7:
PDF: 09005aef83b82bc1/Source: 09005aef83b82ba5
HTF16C256_512x64AZ.fm - Rev. B 10/09 EN
V
V
Symbol
DD
IN
I
VREF
T
, V
I
T
/V
OZ
I
C
A
I
1
DDQ
OUT
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
Module ambient operating temperature
DDR2 SDRAM component case operating
temperature
DD
REF
REF
/V
input 0V ≤ V
leakage current; V
DDQ
Notes: 1. The refresh rate is required to double when 85°C < T
supply voltage relative to V
2
Stresses greater than those listed in Table 7 may cause permanent damage to the DRAM
devices on the module. This is a stress rating only, and functional operation of the mod-
ule at these or any other conditions outside those indicated in the device data sheet is
not implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
2. For further information, refer to technical note
IN
on Micron’s Web site.
≤ 0.95V; (All other pins not under
REF
= valid V
OUT
SS
≤ V
REF
SS
DDQ
level
2GB, 4GB (x64, DR): 240-Pin DDR2 SDRAM UDIMM
IN
≤ V
; DQ and
DD
7
;
Address inputs, RAS#,
CAS#, WE#, BA
S#, CKE, ODT
CK0, CK0#
CK1, CK1#, CK2, CK2#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: Thermal Applications,
C
≤ 95°C.
Electrical Specifications
Min
–0.5
–0.5
–80
–40
–20
–30
–10
–10
–32
–40
–40
©2009 Micron Technology, Inc. All rights reserved.
0
0
Max
+2.3
+2.3
+80
+40
+20
+30
+10
+10
+32
+70
+85
+85
+95
available
Units
µA
µA
µA
°C
°C
°C
°C
V
V