mt16jsf25664hy-1g1 Micron Semiconductor Products, mt16jsf25664hy-1g1 Datasheet - Page 11

• Manufacturer Part Number: mt16jsf25664hy-1g1
• Description: 2gb X64, Dr 204-pin Ddr3 Sdram Sodimm
• Manufacturer: Micron Semiconductor Products

I
Table 9:
PDF: 09005aef83021ee3/Source: 09005aef83021f5a
JSF16C256x64H.fm - Rev. A 3/08 EN
Parameter
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX T
Self refresh temperature current (SRT-enabled): MAX T
All banks interleaved read current
DD
Specifications
DDR3 I
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the
1Gb (128 Meg x 8) component data sheet
Notes:
DD
Specifications and Conditions – 2GB
1. One module rank in the active I
2. All ranks in this I
C
= 85°C
DD
condition.
C
= 95°C
2GB (x64, DR) 204-Pin DDR3 SDRAM SODIMM
11
DD
; the other rank in I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
DD
DD
DD
DD
6ET
4W
2Q
2N
3N
4R
5B
2P
2P
3P
0
1
6
7
1
1
2
1
2
2
2
1
2
DD
2
2
2
1
2
2P (slow exit).
Electrical Specifications
1333
1,120
1,680
1,600
3,840
4,400
960
160
400
800
880
560
960
144
96
©2008 Micron Technology, Inc. All rights reserved
1066
1,360
1,360
3,520
3,200
880
960
160
400
720
800
480
880
144
96
1,120
1,120
3,200
2,880
800
800
960
160
400
640
720
400
800
144
96
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA