mt16jss51264hy-1g1 Micron Semiconductor Products, mt16jss51264hy-1g1 Datasheet - Page 2

• Manufacturer Part Number: mt16jss51264hy-1g1
• Description: 4gb X64, Dr 204-pin Ddr3 Sdram Sodimm
• Manufacturer: Micron Semiconductor Products

Table 2:
Table 3:
PDF: 09005aef832ed836/Source: 09005aef832ed8fb
JSS16C512x64H.fm - Rev. A 5/08 EN
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT16JSS51264H(I)Y-1G5__
MT16JSS51264H(I)Y-1G4__
MT16JSS51264H(I)Y-1G3__
MT16JSS51264H(I)Y-1G1__
MT16JSS51264H(I)Y-1G0__
MT16JSS51264H(I)Y-80C__
MT16JSS51264H(I)Y-80B__
Part Number
Addressing
Part Numbers and Timing Parameters – 4GB Modules
Base device: MT41J512M8THU,
Notes:
2
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes. Example: MT16JSS51264HY-1G1D1.
Module
Density
4GB
4GB
4GB
4GB
4GB
4GB
4GB
1
4Gb TwinDie DDR3 SDRAM
Configuration
512 Meg x 64
512 Meg x 64
512 Meg x 64
512 Meg x 64
512 Meg x 64
512 Meg x 64
512 Meg x 64
4GB (x64, DR) 204-Pin DDR3 SDRAM SODIMM
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bandwidth
10.6 GB/s
10.6 GB/s
10.6 GB/s
Module
8.5 GB/s
8.5 GB/s
6.4 GB/s
6.4 GB/s
4Gb TwinDie (512 Meg x 8)
32K (A[14:0])
1.87ns/1066 MT/s
1.87ns/1066 MT/s
Memory Clock/
1K (A[9:0])
1.5ns/1333 MT/s
1.5ns/1333 MT/s
1.5ns/1333 MT/s
8 (BA[2:0])
2 (S#[1:0])
2.5ns/800 MT/s
2.5ns/800 MT/s
Data Rate
4GB
8K
©2008 Micron Technology, Inc. All rights reserved
(CL-
Clock Cycles
10-10-10
t
Features
8-8-8
9-9-9
7-7-7
8-8-8
5-5-5
6-6-6
RCD-
t
RP)