mt16jtf25664az Micron Semiconductor Products, mt16jtf25664az Datasheet - Page 12

no-image

mt16jtf25664az

Manufacturer Part Number
mt16jtf25664az
Description
2gb, 4gb X64, Dr 240-pin Ddr3 Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
I
Table 11: DDR3 I
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8)
component data sheet
PDF: 09005aef837cdd2d
jtf16c256_512x64az.pdf – Rev. B 9/09
Parameter
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Precharge standby ODT current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX T
Self refresh temperature current (SRT-enabled): MAX T
All banks interleaved read current
Reset current
DD
Specifications
DD
Notes:
Specifications and Conditions – 2GB
1. One module rank in the active I
2. All ranks in this I
C
= 85°C
2GB, 4GB (x64, DR): 240-Pin DDR3 SDRAM UDIMM
DD
condition.
C
= 95°C
12
DD
; the other rank in I
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
I
I
I
I
I
I
I
DD2NT
I
I
I
DD2P0
DD2P1
DD6ET
DD4W
I
I
DD2Q
DD2N
DD3N
I
I
I
DD3P
DD4R
DD5B
DD0
DD1
DD6
DD7
DD8
1
1
2
1
2
2
1
2
2
2
2
2
2
1
2
2
DD2PS0
1600
Electrical Specifications
1056
1216
1072
1120
1072
2096
2096
4160
4896
192
720
856
720
144
224
96
(slow exit).
©2008 Micron Technology, Inc. All rights reserved.
1333
1136
1040
1696
1856
3840
4016
976
192
640
960
776
640
992
144
224
96
1066
1056
1376
1616
3520
3216
896
192
560
848
880
696
560
912
144
224
96
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA

Related parts for mt16jtf25664az