mt9htf12872ay-53e Micron Semiconductor Products, mt9htf12872ay-53e Datasheet

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mt9htf12872ay-53e

Manufacturer Part Number
mt9htf12872ay-53e
Description
256mb, 512mb, 1gb X72, Sr, Ecc 240-pin Ddr2 Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR2 SDRAM Unbuffered DIMM (UDIMM)
MT9HTF3272A – 256MB
MT9HTF6472A – 512MB
MT9HTF12872A – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 240-pin, dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 256MB (32 Meg x 72), 512MB (64 Meg x 72),
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Single rank
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
Table 1:
PDF: 09005aef80e6f860/Source: 09005aef80e5b799
HTF9C32_64_128x72A.fm - Rev. E 1/07 EN
PC2-5300, or PC2-6400
and 1GB (128 Meg x 72)
operation
Speed
Grade
-80E
-800
-667
-53E
-40E
DD
DDSPD
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 SDRAM UDIMM
t
CL = 6
CK
800
Data Rate (MT/s)
CL = 5
800
667
667
www.micron.com
1
CL = 4
533
533
533
533
400
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Operating temperature
• Package
• Frequency/CAS latency
• PCB height
Height 30.0mm (1.18in)
– Commercial (0°C ≤ Τ
– 240-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 30mm (1.18in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for product availability.
3. Not available in 256MB module density.
CL = 3
module offerings.
400
400
400
240-Pin DIMM (MO-237 R/C A/F)
t
12.5
(ns)
RCD
15
15
15
15
C
1
≤ +85°C)
©2003 Micron Technology, Inc. All rights reserved.
2, 3
2, 3
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-80E
-53E
-40E
-800
-667
Y
(ns)
t
55
55
55
55
55
RC

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mt9htf12872ay-53e Summary of contents

Page 1

... (DDR2-667) – 3.75ns @ (DDR2-533) – 5.0ns @ (DDR2-400) • PCB height – 30mm (1.18in) Notes: 1. Contact Micron for industrial temperature 2. Contact Micron for product availability. 3. Not available in 256MB module density. Data Rate (MT/ – 800 ...

Page 2

... Part Number Module Density MT9HTF12872AY-80E__ MT9HTF12872AY-800__ MT9HTF12872AY-667__ MT9HTF12872AY-53E__ MT9HTF12872AY-40E__ Notes: 1. All part numbers end with a two-place code (not shown) designating component and PCB revisions. Consult factory for current revision codes. Example: MT9HTF6472AY-667C2. 2. Data sheets for the base devices can be found at www.micron.com. ...

Page 3

SR, ECC) 240-Pin DDR2 SDRAM UDIMM Pin Assignments and Descriptions Table 6: Pin Assignments 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol ...

Page 4

... I/O Data input/output: Bidirectional data bus. (SSTL_18) CB0–CB7 I/O ECC check bits. (SSTL_18) SDA I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module Supply Power supply: 1.8V ±0.1V Supply SSTL_18 reference voltage. ...

Page 5

SR, ECC) 240-Pin DDR2 SDRAM UDIMM Functional Block Diagram Figure 2: Functional Block Diagram S0# DQS0# DQS0 DM0 DQS1# DQS1 DM1 DQS2# DQS2 DM2 DQS3# DQS3 DM3 DQS8# DQS8 DM8 BA0–BA1/BA2 A0–A12/A13 RAS# CAS# WE# CKE0 ...

Page 6

... DDR2 SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes can be programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 7

... Electrical Specifications Stresses greater than those listed in Table 8 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli- ability ...

Page 8

SR, ECC) 240-Pin DDR2 SDRAM UDIMM I Specifications DD Table 10: DDR2 I Specifications and Conditions – 256MB DD Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 ...

Page 9

SR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 11: DDR2 I Specifications and Conditions – 512MB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) ...

Page 10

SR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 12: DDR2 I Specifications and Conditions (Die Revision A) – 1GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 ...

Page 11

SR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 13: DDR2 I Specifications and Conditions (Die Revision E) – 1GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 ...

Page 12

SR, ECC) 240-Pin DDR2 SDRAM UDIMM Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; ...

Page 13

... Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on SDRAM 4 Number of column addresses on SDRAM 5 DIMM height and module ranks 6 Module data width 7 Reserved 8 Module voltage interface levels t 9 SDRAM cycle time, CK (CL = MAX value, see byte 18) ...

Page 14

... Description 27 MIN row precharge time, 28 MIN row active to row active, 29 MIN RAS# to CAS# delay, 30 MIN active-to-precharge time, 31 Module rank density 32 Address and command setup time, 33 Address and command hold time, 34 Data/data mask input setup time, 35 Data/data mask input hold time, t ...

Page 15

... Week of manufacture in BCD 95–98 Module serial number 99–127 Reserved for manufacturer-specific data 128– Reserved for customer-specific data 255 Notes: 1. The 256MB module is not available in -80E and -800 speed grades. 2. The DDR2 device specification is PDF: 09005aef80e6f860/Source: 09005aef80e5b799 HTF9C32_64_128x72A.fm - Rev. E 1/07 EN Entry (Version) n/a – ...

Page 16

... TYP Pin 1 2.21 (0.087) TYP 1.0 (0.039) TYP 1.0 (0.039) TYP 70.66 (2.782) No components this side of module 3.04 (0.1197) TYP Pin 240 55.0 (2.165) TYP Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for com- plete design dimensions ...

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