mt9htf12872az Micron Semiconductor Products, mt9htf12872az Datasheet - Page 7

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mt9htf12872az

Manufacturer Part Number
mt9htf12872az
Description
1gb X72, Sr, Ecc 240-pin Ddr2 Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
Electrical Specifications
Table 6:
PDF: 09005aef83b961d6/Source: 09005aef83b96204
HTF9C128x72AZ.fm - Rev. A 7/09 EN
V
V
Symbol
DD
IN
I
VREF
, V
T
I
T
/V
OZ
I
C
A
I
1
DDQ
OUT
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
Module ambient operating temperature
DDR2 SDRAM device operating temperature
DD
REF
REF
/V
input 0V ≤ V
leakage current; V
DDQ
Notes: 1. The refresh rate is required to double when 85°C < T
supply voltage relative to V
Stresses greater than those listed in Table 6 may cause permanent damage to the DRAM
devices on the module. This is a stress rating only, and functional operation of the mod-
ule at these or any other conditions outside those indicated in each device’s data sheet is
not implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
2. For further information, refer to technical note
IN
able on Micron’s Web site.
≤ 0.95V; (All other pins not under
REF
= valid V
OUT
SS
≤ V
REF
SS
DDQ
level
IN
1GB (x72, SR, ECC) 240-Pin DDR2 SDRAM UDIMM
≤ V
; DQs and
2
DD
7
;
Commercial
Command/address
RAS#, CAS#, WE#, S#,
CKE, ODT, BA
CK, CK#
DM
DQ, DQS, DQS#
Industrial
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: “Thermal Applications,”
C
≤ 95°C.
Electrical Specifications
Min
–0.5
–0.5
©2003 Micron Technology, Inc. All rights reserved.
–45
–15
–18
–40
–40
–5
–5
0
0
Max
+2.3
+2.3
+45
+15
+18
+70
+85
+85
+95
+5
+5
Units
avail-
µA
µA
µA
°C
°C
°C
°C
V
V

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