m464s0924dts Samsung Semiconductor, Inc., m464s0924dts Datasheet - Page 5

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m464s0924dts

Manufacturer Part Number
m464s0924dts
Description
8mx64 Sdram Sodimm Based On 8mx16, 4banks, 4k Refresh, 3.3v Synchronous Drams With Spd
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
M464S0924DTS
Parameter
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
I
I
I
I
CC2
CC3
Sym-
I
CC2
I
I
CC3
I
CC2
CC2
CC3
CC3
I
I
I
I
b o l
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
IL
I H
I H
IL
I H
I H
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70 C)
V
V
V
V
IH
IH
CC
CC
IL
IL
(min), t
(min), t
IH
(max), t
(max), t
=
=
/V
IL
=V
CC
CC
CC
CC
DDQ
= 10ns
= 10ns
=
=
/V
SSQ
C
L
)
PC133/PC100 SODIMM
-7C
440
560
880
-7A
400
560
800
Version
Rev. 0.1 Sept. 2001
120
100
3.2
80
40
20
20
8
8
8
400
520
760
-1H
400
520
760
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2

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