m464s0824dt1 Samsung Semiconductor, Inc., m464s0824dt1 Datasheet - Page 5

• Manufacturer Part Number: m464s0824dt1
• Description: 8mx64 Sdram Sodimm Based 4mx16, 4banks, Refresh, 3.3v Synchronous Drams With
• Manufacturer: Samsung Semiconductor, Inc.

M464S0824DT1
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
0.2V
V
V
V
V
V
V
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
A
IL
IL
Test Condition
(max), t
(max), t
= 0 to 70 C)
CC
CC
IH
/V
= 10ns
= 10ns
V
V
IL
V
V
IH
IH
=V
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
DDQ
=
=
/V
CC
CC
SSQ
CC
CC
= 10ns
= 10ns
=
=
)
C
L
-1H
Version
Rev. 0.0 Jun. 1999
500
120
200
120
540
600
3.2
48
24
24
PC100 SODIMM
8
8
8
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2