m464s3254jls Samsung Semiconductor, Inc., m464s3254jls Datasheet - Page 9

• Manufacturer Part Number: m464s3254jls
• Description: Sdram Unbuffered Sodimm
• Manufacturer: Samsung Semiconductor, Inc.

8.0 Absolute Maximum Ratings
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
9.0 DC Operating Conditions And Characteristics
Recommended operating conditions (Voltage referenced to V
Note :
1. V
2. V
3. Any input 0V ≤ V
10.0 Capacitance(Max.)
256MB, 512MB Unbuffered SODIMM
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0 ~ CKE1)
Input capacitance (CLK0 ~ CLK1)
Input capacitance (CS0 ~ CS1)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
IH
IL
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
Parameter
DD
Parameter
supply relative to V
Parameter
IN
0
≤ V
~ A
DDQ
12
, BA0 ~ BA1)
. Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
SS
SS
Symbol
V
V
V
V
V
I
OH
DD
OL
LI
IH
IL
Symbol
C
C
C
C
C
C
C
OUT
IN1
IN2
IN3
IN4
IN5
IN6
V
V
Symbol
DD
IN
Min
-0.3
3.0
2.0
2.4
-10
T
, V
I
-
, V
P
STG
OS
D
OUT
DDQ
SS
= 0V, T
9 of 15
Min
25
25
15
15
15
10
10
M464S3254JLS
A
Typ
3.3
3.0
= 0 to 70°C)
0
-
-
-
(V
DD
Max
45
45
25
21
25
12
12
= 3.3V, T
1.0 * # of component
V
DDQ
Max
-55 ~ +150
3.6
0.8
0.4
-1.0 ~ 4.6
-1.0 ~ 4.6
10
-
Value
+0.3
A
50
= 23°C, f = 1MHz, V
Min
45
45
25
15
15
10
13
M464S6453J60
Rev. 1.1 August 2008
Unit
uA
V
V
V
V
V
REF
Max
90
90
45
21
25
15
18
= 1.4V ± 200 mV)
I
OH
I
OL
Unit
SDRAM
mA
°C
W
Note
V
V
= -2mA
= 2mA
1
2
3
Unit
pF
pF
pF
pF
pF
pF
pF