m464s6453cks Samsung Semiconductor, Inc., m464s6453cks Datasheet - Page 6

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m464s6453cks

Manufacturer Part Number
m464s6453cks
Description
Pc133/pc100 Sodimm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
M464S6453CKS
Notes :
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Parameter
I
I
I
I
C C 2
I
CC2
C C 3
I
CC3
Sym-
I
I
CC2
CC3
I
CC2
CC3
I
I
I
bol
CC1
CC4
CC5
CC6
NS
NS
PS
PS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
IL
I H
I H
IL
I H
I H
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
C C
C C
A
= 10ns
= 10ns
= 0 to 70 C)
IH
V
V
V
V
I H
I H
/V
C C
C C
IL
IL
(min), t
(min), t
IL
(max), t
(max), t
=V
=
=
DDQ
C C
C C
C C
C C
/V
= 10ns
= 10ns
=
=
SSQ
)
C
L
PC133/PC100 SODIMM
1120
1840
-7A
960
Version
1040
1760
320
160
480
400
Rev. 0.1 Feb. 2002
960
-1H
32
32
96
96
48
24
1040
1760
960
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2

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