hys64v8000gu-10 Infineon Technologies Corporation, hys64v8000gu-10 Datasheet - Page 8
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hys64v8000gu-10
Manufacturer Part Number
hys64v8000gu-10
Description
3.3v 72-bit Sdram Module
Manufacturer
Infineon Technologies Corporation
Datasheet
1.HYS64V8000GU-10.pdf
(11 pages)
Semiconductor Group
Parameter
Activate(a) to Activate(b) Command
period
CAS(a) to CAS(b) Command period
Mode Register Set-up time
Power Down Mode Entry Time
Refresh Cycle
Refresh Period
(4096 cycles)
Self Refresh Exit Time
Read Cycle
Data Out Hold Time
Data Out to Low Impedance Time
Data Out to High Impedance Time
DQM Data Out Disable Latency
Write Cycle
Write Recovery Time
DQM Write Mask Latency
CAS Latency = 3
CAS Latency = 2
8
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
RRD
CCD
RSC
SB
REF
SREX
OH
LZ
HZ
DQZ
WR
DQW
min
Limit Values
20
20
10
10
15
8M x 64/72 SDRAM-Module
1
0
–
3
0
3
2
0
-10
HYS64(72)V8000GU-10
max
10
64
10
–
–
–
–
–
–
–
–
–
CLK
CLK
CLK
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
6
8